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Examination of HgI/sub 2/ and PbI/sub 2/ photoconductive materials for direct detection, active matrix, flat-panel imagers for diagnostic X-ray imaging

机译:检验用于直接检测的HgI / sub 2 /和PbI / sub 2 /光电导材料,用于诊断X射线成像的有源矩阵,平板成像仪

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In this paper, the results of initial empirical studies of the dark current and X-ray signal response of thick, polycrystalline films of lead iodide (PbI/sub 2/) and mercuric iodide (HgI/sub 2/) are reported. These studies are being carried out as part of an extensive, integrated program of research to develop and incorporate such photoconductive, X-ray detection materials into direct detection, active matrix flat-panel imagers (AMFPIs) for applications in diagnostic imaging, as well as for radiotherapy imaging. Simple detector configurations incorporating these materials were prepared by physical vapor deposition (PVD) with thicknesses ranging from approximately 90 to 500 urn. In the present study, dark current, X-ray sensitivity and temporal response of the detectors were quantitatively evaluated under irradiation conditions relevant to radiography, fluoroscopy and mammography. Measurements were performed for externally applied bias voltages ranging from 0.1 to 2.0V//spl mu/m for both negative and positive polarities.
机译:本文报道了厚的多晶碘化铅(PbI / sub 2 /)和碘化汞(HgI / sub 2 /)的暗电流和X射线信号响应的初步经验研究结果。这些研究是一项广泛而完整的研究计划的一部分,该研究计划旨在将此类光电导X射线检测材料开发并整合到直接检测,有源矩阵平板成像仪(AMFPI)中,以用于诊断成像以及用于放射治疗成像。通过物理气相沉积(PVD)制备厚度约为90至500微米的简单探测器结构,并结合了这些材料。在本研究中,在与放射线照相,荧光检查和乳房X线照相有关的照射条件下,定量评估了探测器的暗电流,X射线敏感性和时间响应。对负极性和正极性均从0.1到2.0V // splμm/ m的外部施加的偏置电压进行了测量。

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