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A study for thermoelectric properties of Ni doped SiC sintered thermoelectric semiconductor

机译：Ni掺杂SiC烧结热电半导体的热电性能研究

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The thermoelectric properties of the p-type SiC:Ni sintered thermoelectric semiconductor have been studied as functions of Ni concentration (from 0.5 wt.96 to 5.0 wt.95) and temperature (from RT to 700/spl deg/C). The electrical resistivity decreases drastically for all the Ni concentration range compared with other dopants such as Cu, Al and B at room temperature. The electrical resistivity and thermoelectric power decrease with increasing temperature. The value of the figure of merit Z approaches 1.4/spl times/10/sup -4/ at around 700/spl deg/C. The condition of the doped impurity atom Ni has also been studied magnetically. It is confirmed that Ni does not segregate in the SiC sintered sample. We conclude that Ni is well diffused into SiC and it is one of the most effective dopants for SiC-based thermoelectric materials.
机译：研究了p型SiC：Ni烧结热电半导体的热电性能，它是Ni浓度（从0.5 wt.96到5.0 wt.95）和温度（从RT到700 / spl deg / C）的函数。在室温下，与其他掺杂剂（例如Cu，Al和B）相比，在所有Ni浓度范围内，电阻率都急剧下降。电阻率和热电功率随温度升高而降低。品质因数Z的值在约700 / spl℃/℃下接近1.4 / spl乘以10 / sup -4 /。磁性地研究了掺杂杂质原子Ni的条件。可以确认，Ni在SiC烧结样品中没有偏析。我们得出的结论是，Ni很好地扩散到SiC中，并且它是SiC基热电材料中最有效的掺杂剂之一。

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