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Microwave differential structures optimization: application to a double balanced SiGe active down-converter design

机译:微波差分结构优化:应用于双平衡SiGe有源下变频器设计

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This paper deals with the design of high performance microwave and millimeter wave balanced circuits. It focuses on the design methodology and the description of some original techniques which improve the balance of microwave differential amplifiers. Based on these structures, an original broadband active balun is proposed and applied as RF and LO power splitters of a K band double balanced down-converter. This converter moreover involves a simplified Gilbert mixing cell, and 3D interconnections have been developed to prevent any balance damage at the couplers/mixer interfaces. The overall function, which converts a 20 GHz RF single-ended signal into a 1 GHz IF one, has been implemented on a compact single chip using a 0.25 /spl mu/m SiGe BiCMOS process. Measurements show an 18 dB conversion gain, a 12 dB double side band noise figure and a -1 dBm OP1dB. Moreover, as a consequence of its highly balanced configuration, this circuit features outstanding port-to-port isolations as well as a spurious-free IF output spectrum.
机译:本文涉及高性能微波和毫米波平衡电路的设计。它着重于设计方法和一些原始技术的描述,这些技术可以改善微波差分放大器的平衡。基于这些结构,提出了一种原始的宽带有源巴伦,并将其用作K波段双平衡下变频器的RF和LO功率分配器。此外,该转换器还包括一个简化的吉尔伯特混合单元,并且已经开发了3D互连以防止耦合器/混合器接口处的任何平衡损坏。整个功能将20 GHz RF单端信号转换为1 GHz IF信号,已使用0.25 / spl mu / m SiGe BiCMOS工艺在紧凑的单芯片上实现。测量显示出18 dB的转换增益,12 dB的双边带噪声系数和-1 dBm的OP1dB。此外,由于其高度平衡的配置,该电路具有出色的端口到端口隔离以及无杂散的IF输出频谱。

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