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Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs

机译：双轴和单轴应变对体和超薄SOI MOSFET中载流子迁移率影响的实验研究

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Biaxial and uniaxial strained silicon technologies are promising for enhancement of CMOS performance. However, the advantage of uniaxial/biaxial strain over biaxial/uniaxial strain in terms of carrier mobility is not clear, since biaxial and uniaxial strain effects on carrier mobility have not till date been directly compared. Furthermore, the carrier mobility under uniaxial strain has not been fully studied in terms of strain directions. On the other hand, in spite of the importance of ultrathin-body (UTB) SOI MOSFETs to suppress the short channel effects in sub-20-nm regime, strain effects in UTB MOSFETs with SOI thickness, T/sub SOI/, of less than 5nm have not be explored yet. In this report, biaxial and uniaxial strain effects on carrier mobility are systematically studied, for the fist time, utilizing externally applied mechanical stress. The biaxial and uniaxial strain effects in UTB MOSFETs with T/sub SOI/ of less than 5nm are also investigated, for the first time.
机译：双轴和单轴应变硅技术有望提高CMOS性能。然而，就载流子迁移率而言，单轴/双轴应变相对于双轴/单轴应变的优势尚不明确，因为迄今为止尚未直接比较双轴和单轴应变对载流子迁移率的影响。此外，尚未就应变方向对单轴应变下的载流子迁移率进行充分研究。另一方面，尽管抑制超薄体（UTB）SOI MOSFET在20 nm以下制程中的短沟道效应很重要，但SOI厚度（T / sub SOI /）较小的UTB MOSFET的应变效应比5nm还没有被探索。在本报告中，首先利用外部施加的机械应力系统地研究了双轴和单轴应变对载流子迁移率的影响。还首次研究了T / sub SOI /小于5nm的UTB MOSFET中的双轴和单轴应变效应。

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