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1μm Semiconductor Light Source with High Power and Broadband for Optical Coherence Tomography

机译:用于光学相干层析成像的1μm高功率和宽带半导体光源

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摘要

1μm light sources are attractive for Fourier domain optical coherence tomography (FD-OCT) applications for ophthalmology. A semiconductor multi-quantum well structure has been designed and grown (based on AlGaAs/GaA material) to reach the 1 μm wavelength window. A compact packaged high power (> 30mW) and wide-bandwidth (>100nm) superluminescent light emit diode (SLD) is achieved with catastrophic optical damage (COD) threshold higher than 100mW. The 1μm SLDs are suitable for high-resolution FD-OCT and SD-OCT applications. A high gain and high P_(sat)1050nm semiconductor optical amplifier (SOA) is also achieved. The 1050nm SOA is a suitable gain medium for swept light sources for ultra high resolution OCT and are ideal for in vivo retinal imaging of small choroid blood vessels below the highly reflective and absorbing retinal pigment epithelium (RPE).
机译:1μm光源对于眼科的傅里叶域光学相干断层扫描(FD-OCT)应用很有吸引力。已经设计并生长了一种半导体多量子阱结构(基于AlGaAs / GaA材料),以达到1μm的波长窗口。实现了紧凑的高功率(> 30mW)和宽带(> 100nm)超发光二极管(SLD),其灾难性光学损伤(COD)阈值高于100mW。 1μmSLD适用于高分辨率FD-OCT和SD-OCT应用。还实现了高增益和高P_(sat)1050nm半导体光放大器(SOA)。 1050nm SOA是用于超高分辨率OCT的扫频光源的合适增益介质,是在高反射和吸收性视网膜色素上皮(RPE)下方的小脉络膜血管的体内视网膜成像的理想选择。

著录项

  • 来源
    《》|2009年|P.73720L.1-73720L.7|共7页
  • 会议地点 Munich(DE)
  • 作者单位

    Inphenix, Inc., 250 North Mines Road, Livermore, CA USA 94551;

    rnInphenix, Inc., 250 North Mines Road, Livermore, CA USA 94551;

    rnInphenix, Inc., 250 North Mines Road, Livermore, CA USA 94551;

    rnInphenix, Inc., 250 North Mines Road, Livermore, CA USA 94551;

    rnInphenix, Inc., 250 North Mines Road, Livermore, CA USA 94551;

  • 会议组织
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光、激光生物医学;
  • 关键词

    Imaging systems; optical coherence tomography;

    机译:成像系统;光学相干断层扫描;

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