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首页> 外文会议> >Characterization of uni-axially stressed Si and Ge concentration in Si1-xGex using polychromator-based multi-wavelength Raman spectroscopy
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Characterization of uni-axially stressed Si and Ge concentration in Si1-xGex using polychromator-based multi-wavelength Raman spectroscopy

机译：基于多色仪的多波长拉曼光谱表征Si 1-x Ge x 中的单轴应力Si和Ge浓度

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摘要

The design concept of a polychromator-based multi-wavelength Raman spectroscopy system (MRS-300) which is designed to overcome the common issues with conventional Raman measurement systems is described. The system is specially designed for non-destructive, material and process characterization applications in the semiconductor industry. The performance of the MRS-300 system and non-destructive nature of the tests of lattice stress/strain and Ge content were demonstrated using mechanically stressed Si samples and epitaxially grown Si1-xGex samples. The capability of very high measurement resolution (0.105 cm-1/pixel or better), accuracy repeatability (0.05 cm-1 or better) and repeatability (0.05 cm-1 or better) of the system were demonstrated at all three excitation wavelengths (457.9 nm, 488.0 nm and 514.5 nm). Possibility of MRS-300 applications as an in-line process monitoring system was also introduced with an example of long term measurement stability and repeatability data.
机译：描述了基于多色仪的多波长拉曼光谱系统（MRS-300）的设计概念，该系统旨在克服常规拉曼测量系统的常见问题。该系统是专为半导体行业中的非破坏性，材料和工艺表征应用而设计的。使用机械应力的硅样品和外延生长的Si 1-x Ge x证明了MRS-300系统的性能以及晶格应力/应变和Ge含量测试的非破坏性示例。极高的测量分辨率（0.105 cm -1 /像素或更高），精度重复性（0.05 cm -1 或更高）和重复性（0.05 cm 在所有三个激发波长（457.9 nm，488.0 nm和514.5 nm）处都显示出-1（或更高）的系统。还以长期测量稳定性和可重复性数据为例，介绍了MRS-300作为在线过程监控系统的可能性。

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