Modelling and Simulation of Wave Propagation Effects in MESFET Devices based on Physical Models

机译：基于物理模型的MESFET器件中波传播效应的建模和仿真

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Propagation effects along the electrodes of single- and multi-gate MESFETs are analyzed by means of new model which directly exploits two-dimensional small-signal simulation. The electromagnetic behaviour is characterized through a quasi-TEM multiconductor line model, and preliminary results are presented concerning the influence of gate width on the overall device performances.

机译：通过直接利用二维小信号仿真的新模型分析了沿单栅和多栅MESFET电极的传播效应。通过准TEM多导体线模型表征电磁行为，并给出了有关栅极宽度对整个器件性能的影响的初步结果。

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《Solid State Device Research Conference, 1987. ESSDERC '87》|1987年|317-320|共4页
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Ghione Giovanni; Naldi Carlo U.;
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Modelling and Simulation of Wave Propagation Effects in MESFET Devices based on Physical Models

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