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首页> 外文会议>International symposium on System synthesis >RF thermal plasma CVD of diamond: the role of acetylene in filmmorphology
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RF thermal plasma CVD of diamond: the role of acetylene in filmmorphology

机译：金刚石的射频热等离子体CVD：乙炔在薄膜中的作用形态学

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Summary form only given. Diamond films produced by chemical vapordeposition (CVD) show faceting which is characterized by {100} or {111}surfaces. Many investigators have found that the morphology issystematically affected by substrate temperature, but contrary trendshave been reported in the literature. In particular, some thermal plasmaand combustion flame results have indicated that higher substratetemperatures shift the faceting from {111} to {100}, while most otherresults have indicated just the opposite. In this work we report thatthese contrary trends can be explained by the relative abundance ofacetylene at the diamond surface during film growth. Diamond film growthexperiments were conducted using an RF (3.2 MHz) plasma torch operatingin the pressure range 267-1013 mbar (200-760 Torr). The plasma consistsof argon and hydrogen with injected methane. Gas was sampled through amicro-orifice in the center of the film growth substrate and deliveredto a gas chromatograph (GC), which provides measurements of severalstable chemical species. A detailed two-dimensional numerical model wasdeveloped of the flow and chemistry in the region between the torch exitand the substrate, including the effect of the sampling orifice, andchemistry in the gas sampling line was modeled assuming plug flow
机译：仅提供摘要表格。化学蒸气产生的金刚石膜 沉积（CVD）显示刻面，其特征是{100}或{111} 表面。许多研究人员发现形态是 受基材温度的系统影响，但趋势相反 在文献中已有报道。特别是一些热等离子体 和燃烧火焰结果表明更高的底物 温度将构面从{111}移到{100}，而其他大多数 结果表明恰恰相反。在这项工作中，我们报告说 这些相反的趋势可以用相对丰度来解释。 薄膜生长过程中金刚石表面的乙炔。金刚石膜的生长 实验是使用RF（3.2 MHz）等离子炬进行的 在267-1013毫巴（200-760托）的压力范围内。血浆包括 注入甲烷的氩气和氢气。气体通过 薄膜生长基板中心的微孔并已交付 气相色谱仪（GC），它可以测量多个 稳定的化学物种。详细的二维数值模型是 在割炬出口之间的区域中流动和化学物质的形成 和基板，包括采样孔的影响，以及 在假定塞流的情况下对气体采样管线中的化学成分进行建模

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