Epitaxial lift-off in photovoltaics:ultra thin AI_(0.2)Ga_(0.8)As cell in a mechanically stacked (AI,Ga)As/Si tandem

机译：光伏中的外延剥离：机械堆叠（AI，Ga）As / Si串联的超薄AI_（0.2）Ga_（0.8）As电池

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The potential of high conversion efficiency of solar energy through the combination of AI_(0.2)Ga_(0.8)As and Si cells is illustrated by a mechanically stacked tandem using for the first time the epitaxial lift-off (ELO) technique to remove the top cell from its substrate. The selective etching of the GaAs substrate provides efficient light transmission to the bottom cell. Photoluminescence decay experiments show also that substrate removal enhances photon recycling effects. The measured efficiency of the Al_(0.2)Ga_(0.8)As/Si tandem reaches 21% AM1.5.

机译：通过AI_（0.2）Ga_（0.8）As和Si电池相结合的太阳能高转换效率的潜力通过首次使用外延剥离（ELO）技术去除顶部的机械堆叠串联来说明细胞从其底物。 GaAs基板的选择性刻蚀可有效地将光传输到底部电池。光致发光衰减实验还表明，去除底物可增强光子回收效果。 Al_（0.2）Ga_（0.8）As / Si串联的测量效率达到21％AM1.5。

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《IEEE world conference on photovoltaic energy conversion;WCPEC;IEEE photovoltaic specialists conference;PVSC》|1994年|1898-1901|共4页
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K. Zahraman; J.C. Guillaume; G. Nataf; B. Beaumont; M. Leroux; P. Gibart; J.P. Faurie;
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中图分类物理化学（理论化学）、化学物理学;能源;
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1. Ni/AI_(0.2)Ga_(0.8)N interfacial reaction and Schottky contact formation using high quality epitaxial layers [J] . B. Boudjelida, I. Gee, J. Evans-Freeman, Journal of Applied Physics . 2008,第5期

机译：Ni / Al_（0.2）Ga_（0.8）N界面反应和使用高质量外延层的肖特基接触形成
2. Time-Resolved Photoluminescence of a Two-Dimensional Electron Gas in an AI_(0.2)Ga_(0.8)N/GaN Heterostructure Fabricated on Ammonothermal GaN Substrates [J] . Shigefusa F. Chichibu, Kouji Hazu, Yuji Kagamitani, Annales de l'I.H.P . 2011,第4期

机译：氨热GaN衬底上AI_（0.2）Ga_（0.8）N / GaN异质结构中二维电子气的时间分辨光致发光
3. Szumy małej częstotliwości detektorów nBn na zakres średniej podczerwieni wykonanych z supersieci II rodzajuInAs/GaSb z barierą AI_(0.2)Ga_(0.8)Sb [J] . ŁUKASZ CIURA, ANDRZEJ KOLEK, ANDRZEJ KOWALEWSKI, Elektronika . 2013,第11期

机译：由具有AI_（0.2）Ga_（0.8）Sb势垒的IIA超系列/ GaSb超级网络制成的每个中红外范围的nBn探测器的低频噪声
4. Epitaxial lift-off in photovoltaics:ultra thin Al/sub 0.2/Ga/sub 0.8/As cell in a mechanically stacked (Al,Ga)As/Si tandem [C] . Zahraman, K., Guillaume, . 1994

机译：光伏中的外延剥离：机械堆叠（Al，Ga）As / Si串联的超薄Al / sub 0.2 / Ga / sub 0.8 / As电池
5. Thermodynamic Investigation of La0.8Sr0.2MnO 3±δ Cathode Including the Prediction of Defect Chemistry, Electrical Conductivity and Thermo-Mechanical Properties [D] . Darvish, Shadi 2018

机译：La0.8Sr0.2MnO 3±δ阴极的热力学研究，包括缺陷化学，电导率和热机械性能的预测
6. DislocationsAccelerate Oxygen Ion Diffusion in La0.8Sr0.2MnO3 Epitaxial Thin Films [O] . Edvinas Navickas, Yan Chen, ¶, -1

机译：脱位La0.8Sr0.2MnO3外延薄膜中的加速氧离子扩散
7. Tandem Solar Cells: Vacuum‐Assisted Growth of Low‐Bandgap Thin Films (FA 0.8 MA 0.2 Sn 0.5 Pb 0.5 I 3 ) for All‐Perovskite Tandem Solar Cells (Adv. Energy Mater. 5/2020) [O] . Bahram Abdollahi Nejand, Ihteaz M. Hossain, Marius Jakoby, 2020

机译：串联太阳能电池：用于全钙钛矿串联太阳能电池的低带隙薄膜的真空辅助生长（FA 0.8 mA 0.2 SN 0.5 PB 0.5 I 3）（ADV。能量母体。5/2020）
8. Mechanically-stacked tandem solar cells with GaAsP on GaP and silicon [R] . Negley, Gerald H., Mcneely, James B., Lasswell, Patrick G., 1987

机译：在Gap和硅上具有Gaasp的机械堆叠串联太阳能电池

Epitaxial lift-off in photovoltaics:ultra thin AI_(0.2)Ga_(0.8)As cell in a mechanically stacked (AI,Ga)As/Si tandem

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