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Study of hydrogen content in hydrogenated FeTi thin films using erda

机译：用erda研究氢化FeTi薄膜中的氢含量

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In recent year H_2 is playing a very important role in modifying the properties of both in metals and semicunductors. It has become one of the alternative sources of energy resulting in lot of development of metal hydride technology for hydrogen storage. Therefore hydrogen content in hydride at various depths has become very important. In the present work hydrogen content and its depth profle in hydrogenated FeTi thin films have been investigated by ERDA (Elastic Recoil Detection analysis) using 160 MeV, Ag~(107) ions. The studies were undertaken in General Purpose Scattering Chamber (GPSC) at Nuclear Science Centre (NSC), New Delhi, India. The thin films samples were hydrogrnated by annealing therm in 10~(-5) Torr vacuum at 100 deg C for 30 minutes and then cooled to room temperature before exposing to hydrogen at a pressure of 1 atmosphere for 12 hours. ERDA investigation have shown that FeTi thin films without exposing hydrogen have about 50 at.
机译：近年来，H_2在改变金属和半导体的性能方面起着非常重要的作用。它已成为替代能源之一，从而导致了用于存储氢的金属氢化物技术的大量发展。因此，氢化物在不同深度的氢含量变得非常重要。在目前的工作中，使用160 MeV，Ag〜（107）离子通过ERDA（弹性反冲检测分析）研究了氢化FeTi薄膜中的氢含量及其深度分布。这项研究是在印度新德里核科学中心（NSC）的通用散射室（GPSC）中进行的。通过在10℃（-5）托真空中在100℃下将热退火30分钟，然后将其冷却至室温，然后在1个大气压下暴露于氢气中12小时，使薄膜样品水凝。 ERDA研究表明，未暴露氢的FeTi薄膜约有50 at。

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