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首页> 外文会议>ASME international mechanical engineering congress and exposition >Segfregation during magnetically-stabilized lliquid-encapsulated growth of compound semiconductor crystals
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Segfregation during magnetically-stabilized lliquid-encapsulated growth of compound semiconductor crystals

机译：化合物半导体晶体的磁稳定l液体封装生长过程中的隔离

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During the magnetically-stabilized liquid-encapuslated Xzochralski (MLEC) process, a single compound semiconductor crystal is grown by the solidification of an initially molten semiconductor (melt) contained in a criucible. The melt is doped with an element in order to vary the electrical and/or optical properties of the crystal. During growth, the so-called melt-depletion flow caused by the opposing relative mitions of the encapsulant-melt interface and the crystallemt interface can be controlled with an externally applied magnetic field. The convective dopant transport during growth driven by this melt motion produces non-uniformities of the dopant concentration in both the melt and the crystal. This paper presents a model for the unsteady transport of a dopant during the MLEC process with an axial magnetic field. Dopant distributions in the crystal and in the melt at several different stages during growth are presented.
机译：在磁稳定的液体包裹的Xzochralski（MLEC）工艺中，通过固化坩埚中最初熔化的半导体（熔体）的固化，可以生长出单个化合物半导体晶体。熔体中掺杂有元素，以改变晶体的电和/或光学性质。在生长期间，可以通过外部施加的磁场来控制由密封剂-熔体界面和结晶界面的相对相对离子引起的所谓的熔体耗竭流。在此熔体运动的驱动下，生长过程中的对流掺杂剂传输会在熔体和晶体中产生掺杂剂浓度的不均匀性。本文提出了一种在轴向磁场作用下MLEC过程中掺杂物非稳态传输的模型。给出了生长过程中几个不同阶段在晶体和熔体中的掺杂剂分布。

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