Elimination of Junction Spiking Problem by using Pre-Clean Etch and Two Stop TiN during the Contact Barrier Deposition Process

机译：在接触势垒沉积过程中使用预清洗蚀刻和两个停止TiN消除结尖峰问题

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Aluminum Plug Technology is still utilized for many different semiconductor device applications. It is a reliable and cost saving technology which eliminates the need for tungsten deposition and tungsten etch back, or tungsten CMP processes. Along with the advantages, there are some disadvantages of using the Aluminum Plug (AlCu) process at the contact level. The main disadvantage is aluminum junction spiking caused as a result of aluminum spiking into the silicon substrate, and silicon diffusion from the silicon substrate into the AlCu plug. In order to avoid junction spiking, it is important to deposit a contact harrier that can prevent junction spiking. The problem of junction spiking was solved by using a pre-clean etch along with a two step TiN barrier process. A discontinuous TiN grain structure was observed for the two step TiN barrier process. The shift in the columnar grain structure improved the TiN contact barrier performance and eliminated the junction spiking problem.

机译：铝塞技术仍被用于许多不同的半导体器件应用中。这是一项可靠且节省成本的技术，消除了对钨沉积和钨回蚀或钨CMP工艺的需求。除了优点之外，在接触层使用铝塞（AlCu）工艺还有一些缺点。主要缺点是铝结扎到硅衬底中导致结铝结，以及硅从硅衬底扩散到AlCu栓塞中。为了避免结尖峰，重要的是要沉积一个可以防止结尖峰的接触架。通过使用预清洗蚀刻以及两步TiN势垒工艺，解决了结尖峰的问题。对于两步TiN势垒过程，观察到不连续的TiN晶粒结构。柱状晶粒结构的转变改善了TiN接触势垒性能并消除了结尖峰问题。

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《International VLSI multilevel interconnection conference;VMIC》|2000年|p.317-319|共3页
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Ardy Sidhwa; Charles Spinner; Todd Gandy; Scott Guisinger;
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中图分类无线电电子学、电信技术;
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Elimination of Junction Spiking Problem by using Pre-Clean Etch and Two Stop TiN during the Contact Barrier Deposition Process

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