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Elimination of PR poison by Surface Modification on Low k CVD Materials

机译:通过低k CVD材料的表面改性消除PR毒物

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Surface modification by UV treatment on carbon-doped CVD low k materials deposited by siliane containing methyl groups was developed to eliminate the interaction of DUV photoresist and carbon-doped oxide in via for dual damascene patterning. The effect of UV treatment on the characteristics of carbon-doped oxide has been investigated. Experimental data indicates that the formation of Si-OH bond at the surface is the key to eliminate the reaction between carbon-doped oxide and photo-acid-generator in DUV photoresist. Although DUV treatment degrades the structure of low-k carbon-doped oxide, the damages was found eliminated by incorporating a properly designed anti-reflection coating.
机译:开发了通过紫外线处理在含甲基的甲硅烷基沉积的碳掺杂CVD低k材料上进行表面改性的方法,以消除DUV光致抗蚀剂和碳掺杂氧化物在双金属镶嵌图案化通孔中的相互作用。研究了紫外线处理对碳掺杂氧化物特性的影响。实验数据表明,在表面形成Si-OH键是消除DUV光刻胶中碳掺杂氧化物与光酸发生剂之间反应的关键。尽管DUV处理会降低低k碳掺杂氧化物的结构,但发现通过掺入适当设计的抗反射涂层可以消除这种损害。

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