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Improved TiN-Based Diffusion Barrier Using Multilayered Ti/TiN Structure

机译:多层Ti / TiN结构的改进的基于TiN的扩散阻挡层

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In this study, a novel TiN-based diffusion barrier with multilayered Ti/TiN structure was proposed and successfully applied to Cu and Al metallization. TiN-based diffusion barrier with multilayered Ti/TiN structure was formed by inserting thin Ti layers. Columnar grain structure of TiN was discontinuous while a thin Ti layer was inserted in TiN. It is found that it is a more effective diffusion barrier in Cu and Al metallization than TiN alone. Failure temperature of TiN-based diffusion barrier was increased by multilayered Ti/TiN structure.
机译:在这项研究中,提出了一种具有多层Ti / TiN结构的新型基于TiN的扩散势垒,并成功地应用于Cu和Al的金属化。通过插入薄的Ti层形成具有多层Ti / TiN结构的基于TiN的扩散阻挡层。 TiN的柱状晶粒结构不连续,而在TiN中插入了一层薄的Ti层。已经发现,与单独的TiN相比,它在Cu和Al金属化中是更有效的扩散阻挡层。 TiN / TiN多层结构提高了TiN基扩散阻挡层的失效温度。

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