INTEGRATED MULTISCALE PROCESS SIMULATOR FOR LPCVD

机译：LPCVD的集成式多尺度过程仿真器

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We present an integrated multiscale process simulator (IMPS) for thermal CVD processes, in which models on the reactor scale and pattern (mesoscopic) scales are coupled tightly with a feature scale model to predict loading effects. Steady state and transient simulation results for LPCVD of SiO_2 from tetraethoxysilane (TEOS) are presented and discussed. We also discuss reaction chemistry, particularly relevant to TEOS sourced LPCVD of SiO_2, and the use of film profile information to help decide between, and to help refine, kinetic models.

机译：我们提出了一种用于热CVD过程的集成多尺度过程模拟器（IMPS），其中反应堆尺度和图案（介观）尺度的模型与特征尺度模型紧密结合，以预测加载效果。给出并讨论了四乙氧基硅烷（TEOS）对SiO_2进行LPCVD的稳态和瞬态模拟结果。我们还讨论了反应化学，特别是与TEOS来源的SiO_2的LPCVD相关的化学反应，以及膜轮廓信息的使用，以帮助在动力学模型之间进行选择和完善。

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《International VLSI multilevel interconnection conference;VMIC》|2000年|p.233-242|共10页
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T. S. Cale; T. P. Merchant; L. J. Borucki; M. K; Gobbert; A. H. Labun;
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中图分类无线电电子学、电信技术;
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INTEGRATED MULTISCALE PROCESS SIMULATOR FOR LPCVD

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