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Mechanical Aspects of CMP

机译：CMP的机械方面

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摘要

CMP has become a leading planarization technique in the manufacture of advanced integrated circuits (IC) chips and is one of the key fabrication processes. The shrinking feature size, introduction of new materials and impressive requirements for surface planarity and quality push the limits of the process. There is still a need to better understand the physics of CMP from the mechanical as well as chemical point of view. This paper reviews research work at Berkeley on mechanical elements of CMP and the development of a comprehensive model integrating both mechanical and chemical effects in CMP with the goal of predicting feature pattern evolution, design of optimal process recipes and help to understand the CMP-imposed limits on the reproducibility of deep sub-micron features. Research on sensors for process monitoring, process behavior from a hydrodynamic viewpoint, synergy between chemical and mechanical removal, step height reduction and an architecture for an integrated model including abrasive size and characteristic will be reviewed.
机译：CMP已成为先进集成电路（IC）芯片制造中的领先平面化技术，并且是关键的制造工艺之一。不断缩小的特征尺寸，新材料的引入以及对表面平面度和质量的令人印象深刻的要求推动了该工艺的极限。从机械和化学的观点来看，仍然需要更好地理解CMP的物理。本文回顾了伯克利（Berkeley）在CMP的机械元素方面的研究工作以及综合了CMP中机械和化学作用的综合模型的开发，目的是预测特征图案的演变，设计最佳工艺配方并帮助理解CMP施加的极限深亚微米特征的可重复性。将审查用于过程监控的传感器，从流体力学角度看过程行为，化学和机械去除之间的协同作用，台阶高度减小以及包括磨料尺寸和特性的集成模型的体系结构的研究。

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