A CORRELATION OF PECVD OXIDE FILM CHARGE TO TRANSISTOR LEAKAGE

机译：PECVD氧化膜电荷与晶体管泄漏的相关性

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Root cause of N-Field transistor leakage has been identified to a shunt capacitor voltage adjustment from a PECVD process tool. This caused a higher charge in the deposited oxide films with a noticeable pattern. A low charge LTO PECVD process was developed with no NFVT shift even though the shunt capacitance was intentionally set high. This demonstrates that the new low charge process is robust and reliable to leakage. Simulation data also showed that the major charge contribution to NFLK is from the deposited oxide closer to field transistor, while charges residing in the IMD cap layers also effect the NFLK through accumulative process.

机译：已通过PECVD工艺工具确定了并联电容器电压调整的N场晶体管泄漏的根本原因。这在具有明显图案的沉积的氧化膜中引起较高的电荷。即使有意将分流电容设置为高电平，也可以开发出没有NFVT漂移的低电荷LTO PECVD工艺。这证明了新的低电荷过程是坚固且可靠的泄漏。仿真数据还表明，对NFLK的主要电荷贡献是来自更靠近场晶体管的沉积氧化物，而驻留在IMD盖层中的电荷也会通过累积过程影响NFLK。

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《International VLSI multilevel interconnection conference;VMIC》|2000年|p.275-284|共10页
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K. Leo Zhang; D. Wei; W. Catabay; Y Wang; J. Dong; S. Yoshikawa; Y.L. Ho.;
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中图分类无线电电子学、电信技术;
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A CORRELATION OF PECVD OXIDE FILM CHARGE TO TRANSISTOR LEAKAGE

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