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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >A Study of PMD films by Using SACVD and APCVD in AlSiCu and AlCu Metalization Process
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A Study of PMD films by Using SACVD and APCVD in AlSiCu and AlCu Metalization Process

机译：SASiC和APCVD在AlSiCu和AlCu金属化过程中PMD膜的研究

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摘要

The properties and device performance of PMD BPSG films deposited from SACVD and APCVD process with different AlSiCu and AlCu interconnections by planner magnetron sputtering on device wafers have been studied by using scanning electron microscopy, focus ion beam, transmission electron microscopy, energy dispersion analysis X-ray and electrical measurement on memory device. The BPSG films formed by APCVD and SACVD with AlSiCu interconnection show excellent performance on device wafers. The APCVD BPSG PMD combined with AlCu interconnections also shows good performance. But, a combination of SACVD BPSG films and AlCu interconnections was found poor perfonnance due to the current leakage caused by different flow property of APCVD and SACVD. Since the thickness of contact barrier was an important parameter of metal interconnections. The different thickness of barrier Titanium/Titanium Nitride films was also studied in this article. The performance was significantly improved when the thickness of Ti/TiN was increased from 150/500A to 400/900A in the combination of SACVD BPSG PMD and AlCu interconnections device. Furthermore, the contact barriers which treated at temperature 540°C to 560°C shows more stable resistance, while the treatment temperature increased to about 580°C to 60°C, the contact resistance was increased and became unstable. In a brief, a thicker barrier Ti/TiN treated by RTA at temperature 540°C to 560°C provided better contact resistance and current leakage which can improved performance on the SACVD BPSG PMD and AlCu constructed device. And the result data shows comparable for APCVD and SACVD when Ti/TiN thickness was increased from 150/500 A to 400/900 A.
机译：通过扫描电子显微镜，聚焦离子束，透射电子显微镜，能量色散分析X-研究了平面化学磁控溅射SACVD和APCVD工艺制备的具有不同AlSiCu和AlCu互连的PMD BPSG膜的性能和器件性能。射线和电子测量在存储设备上。通过APCVD和SACVD与AlSiCu互连形成的BPSG膜在器件晶圆上显示出出色的性能。与AlCu互连相结合的APCVD BPSG PMD也显示出良好的性能。但是，由于APCVD和SACVD的不同流动特性引起的电流泄漏，发现SACVD BPSG膜和AlCu互连的性能差。由于接触势垒的厚度是金属互连的重要参数。本文还研究了不同厚度的阻挡钛/氮化钛薄膜。当SACVD BPSG PMD和AlCu互连器件结合使用时，当Ti / TiN的厚度从150 / 500A增加到400 / 900A时，性能得到了显着改善。此外，在540℃至560℃的温度下处理的接触阻挡层显示出更稳定的电阻，而当处理温度升高至约580℃至60℃时，接触电阻增加并且变得不稳定。简而言之，在540°C至560°C的温度下通过RTA处理的较厚的Ti / TiN势垒提供了更好的接触电阻和电流泄漏，可以改善SACVD BPSG PMD和AlCu构造器件的性能。结果数据显示，当Ti / TiN厚度从150/500 A增加到400/900 A时，APCVD和SACVD具有可比性。

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