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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >Process Methodologies to Reduce Rework and Plug Coring in Sub-Quarter Micron Tungsten Chemical Mechanical Planarization Using H_2O_2 Containing Slurries
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Process Methodologies to Reduce Rework and Plug Coring in Sub-Quarter Micron Tungsten Chemical Mechanical Planarization Using H_2O_2 Containing Slurries

机译：使用含H_2O_2的浆料减少亚季微米钨化学机械平面化中返工和塞子取芯的工艺方法

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摘要

This paper is aimed towards addressing and understanding variations in tungsten chemical mechanical planarization (W CMP) removal/rework rates for sub-quarter micron devices, as well as minimizing contact/via W plug coring. The first part of the paper discusses minimizing W CMP rework by addressing an unexpected part/product and interconnect level dependence of removal/rework rate on reticle percent transmittance. The second part of the paper discusses a novel 2-step polish method to minimize the propensity of the hydrogen peroxide (H_2O_2) oxidizer from etching and "coring" the weak seams of the W plugs. The two parts of the paper are partially coupled because the high rework issue cannot be solved by simply increasing the polish time, for this would result in severe W plug coring of the weak seam. Conversely, the plug coring issue can not be solved by simply decreasing the extent of overpolish, for this would result in an extraordinary amount of rework. This paper discusses and addresses methods to solve the partially coupled problems of W plug coring and high W CMP rework in H_2O_2 containing slurries.
机译：本文旨在解决和理解亚四分之一微米设备的钨化学机械平面化（W CMP）去除/返工率方面的变化，以及最大程度地减少接触/通过W插头取芯。本文的第一部分讨论了通过解决意外的零件/产品以及互连/去除水平/返工率对掩模版透光率的依赖程度，来最大程度地减少W CMP返工的问题。本文的第二部分讨论了一种新颖的两步抛光方法，该方法可最大程度地减少过氧化氢（H_2O_2）氧化剂从W塞的弱接缝处腐蚀和“取心”起的倾向。本文的两个部分是部分耦合的，因为仅通过增加抛光时间就无法解决高返工问题，因为这将导致弱接缝的严重W塞取芯。相反，仅通过减少过度抛光的程度就不能解决塞子取芯的问题，因为这将导致大量的返工。本文讨论并解决了解决含H_2O_2浆液中W塞取芯和高W CMP返工的部分耦合问题的方法。

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