SPUTTER DEPOSITION OF Ta/TaN_x DIFFUSION BARRIERS FOR Cu INTERCONNECTS

机译：Ta / TaN_x扩散阻挡层用于Cu互连的溅射沉积

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The application of Cu interconnects requires an effective diffusion barrier to prevent Cu from diffusing into Si and SiO_2. Among the many barrier materials that have been studied, Ta and TaN_x are reported to have excellent diffusion barrier properties between Cu and Si. Sputtering is an effective method to deposit Ta and TaN in Cu/barrier/Si or Cu/barrier/SiO_2 structures. In this study, the metallurgical properties and sputtering performance of a Ta target was studied. The effects of sputtering process parameters such as N_2/Ar flow ratio on film properties such as electrical resistivity and film uniformity were investigated.

机译：Cu互连的应用需要有效的扩散阻挡层，以防止Cu扩散到Si和SiO_2中。在许多已研究的阻挡材料中，据报道Ta和TaN_x在Cu和Si之间具有出色的扩散阻挡性能。溅射是在铜/势垒/ Si或铜/势垒/ SiO_2结构中沉积Ta和TaN的有效方法。在这项研究中，研究了Ta靶的冶金性能和溅射性能。研究了溅射工艺参数（如N_2 / Ar流量比）对膜性能（如电阻率和膜均匀性）的影响。

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《International VLSI multilevel interconnection conference;VMIC》|2000年|p.487-489|共3页
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Hao Zhang;
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中图分类无线电电子学、电信技术;
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1. Robust TaN_x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition [J] . H. Kim, C. Detavenier, O. van der Straten, Journal of Applied Physics . 2005,第1期

机译：金属有机等离子体增强的原子层沉积技术，用于亚互连厚度的铜互连技术的坚固TaN_x扩散势垒
2. Barrier capability of TaN_x films deposited by different nitrogen flow rate against Cu diffusion in Cu/TaN_x+ -p junction diodes [J] . Wen Luh Yang, Wen-Fa Wu, Don-Gey Liu Solid-State Electronics . 2001,第1期

机译：不同氮流量沉积的TaN_x薄膜对Cu / TaN_x / n + -p结二极管中Cu扩散的阻挡能力
3. Effect of Film Microstructure on Diffusion Barrier Properties of TaN_x Films in Cu Metallization [J] . Sung-Man Kim, Gi-Rak Lee, Jung-Joong Lee Japanese journal of applied physics . 2008,第8issue3期

机译：薄膜微结构对TaN_x薄膜在铜金属化过程中扩散阻挡性能的影响
4. Autocatalytic Electroless Cu on Pd activated TaN_x Barrier for ULSI Interconnect [C] . Seok Woo Hong, Chang-Hee Shin, Sung-Hoon Yang The Meeting of the Electrochemical Society . 2001

机译：对ULSI互连的PD激活Tan_x屏障的自动催化铜
5. Atomic layer deposition and properties of refractory transition metal-based copper-diffusion barriers for ULSI interconnect. [D] . Lemonds, Andrew Michael. 2003

机译：用于ULSI互连的难熔过渡金属基铜扩散阻挡层的原子层沉积和性能。
6. Enhanced Ti0.84Ta0.16N diffusion barriers grown by a hybrid sputtering technique with no substrate heating between Si(001) wafers and Cu overlayers [O] . Marlene Mühlbacher, Grzegorz Greczynski, Bernhard Sartory, -1

机译：在Si（001）晶片和Cu覆盖层之间通过混合溅射技术生长的增强的Ti0.84Ta0.16N扩散阻挡层无需基板加热即可生长
7. Phase Transformation by Cu Diffusion of Electrolessly Deposited Ni-B Diffusion Barrier for Cu Interconnect [O] . J. W. Choi, G. H. Hwang, J. H. Song, 2005

机译：Cu互连的Cu沉积Ni-B扩散屏障Cu扩散的相变
8. Sputtered Ta-Si-N Diffusion Barriers in Cu Metallizations for Si [R] . Kolawa, E., Pokela, P. J., Reid, J. S., 1991

机译：si的Cu金属化中的溅射Ta-si-N扩散阻挡层

SPUTTER DEPOSITION OF Ta/TaN_x DIFFUSION BARRIERS FOR Cu INTERCONNECTS

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