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首页> 外文会议>International VLSI multilevel interconnection conference;VMIC >The Improvement on Dual Damascene Tungsten Planarization via End-Point Signal Triggered Two-Step Polishing
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The Improvement on Dual Damascene Tungsten Planarization via End-Point Signal Triggered Two-Step Polishing

机译：端点信号触发两步抛光对双镶嵌钨平面化的改进

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摘要

A two-step polish was integrated into the planarization process of a dual damascene tungsten structure to achieve better physical and electrical properties. The separation of the polishing steps was determined by the end point detection signals. The first step that carries a higher mechanical force relative to the single step polish gives a stronger and more stable end point signals. The followed step with a reduced mechanical force offers a lower oxide erosion capability, which eventually widens the process window. A conventional rotary tool combined with the commercially available slurry and pad was utilized for the investigation. The improved in-line monitoring properties over conventional single step polish such as sheet resistance of metal line, oxide erosion of arrays, etc. will be discussed.
机译：两步抛光被集成到双镶嵌钨结构的平面化过程中，以实现更好的物理和电性能。抛光步骤的间隔由终点检测信号确定。相对于单步抛光，承载更高机械力的第一步提供了更强，更稳定的终点信号。随后的具有减小的机械力的步骤提供了较低的氧化物侵蚀能力，这最终扩大了工艺范围。结合市场上可买到的浆液和垫的常规旋转工具被用于研究。将讨论与常规单步抛光相比改进的在线监测特性，例如金属线的薄层电阻，阵列的氧化物腐蚀等。

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