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Thickness Measurements on Patterned Sites for CMP

机译:CMP图案化部位的厚度测量

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Differences in pattern density at the die level and sub-die level can cause large differences in local polish rate. Due to the tighter process control requirements anticipated as the process window narrows, the use of a test site located in the scribe line is not always a viable option. There is a strong need to expand the available choice of measurement sites to enable thickness monitoring at locations dictated by process control requirements- Therefore, thickness measurements should take place at the locations of interest within the die, using the sites available there. Such sites are often patterned, consisting of multiple adjacent layer stacks. This paper presents a novel measurement technique for measuring the thickness of dielectric layers or other layers commonly used in back-end-of-line processes, which dramatically increases the available choice of measurement locations, enabling thickness measurements on various regularly patterned backgrounds previously attainable only by destructive cross-sectional measurements.
机译:芯片级和子芯片级的图案密度差异可能会导致局部抛光速率产生较大差异。由于随着过程窗口变窄,预期对过程控制的要求会越来越严格,因此使用位于划线处的测试站点并非总是可行的选择。迫切需要扩展测量位置的可用选择,以在过程控制要求所指示的位置进行厚度监控。因此,应使用模具中的可用位置在模具内感兴趣的位置进行厚度测量。通常将这些位点图案化,由多个相邻的层堆叠组成。本文提出了一种新颖的测量技术,用于测量线路后端工艺中通常使用的介电层或其他层的厚度,这极大地增加了测量位置的可用选择,从而使以前只能达到的各种规则图案背景的厚度测量成为可能。通过破坏性的横截面测量。

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