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Effect of Ge On The Electrical Properties Of PbTe

机译：Ge对PbTe电性能的影响

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The Structure, Electrical, and Thermal Properties of (Pb_(1-x)Ge_(x)Te) thin films with x<=0.35 prepared by melting its constituents in vacuum were investigated. X-RAY diffraction for (Pb_(1-x)Ge_(x)Te) thin films and powder samples were studied. The lattice parameters and angles were affected by germanium concentration. Conductivity was measured for (Pb_(1-x)Ge_(x)Te) with different Ge concentrations from room temperature to 473K. The heating cycle for all Ge concentrations was non uniform while cooling run was linear especially 2~(nd) run. The activation energy of conduction was calculated and discussed. Anomalous behaviours in conduction temperature (154 to 473K) curve were observed for x=0.05, 0.15, 0.25, and 0.35. The results of Seebeck effect indicated that the addition of Ge to PbTe leads to a promising thermoelectric material.
机译：研究了通过真空熔化其成分制备的x <= 0.35的（Pb_（1-x）Ge_（x）Te）薄膜的结构，电学和热学性质。研究了（Pb_（1-x）Ge_（x）Te）薄膜和粉末样品的X射线衍射。晶格参数和角度受锗浓度的影响。在室温到473K范围内，用不同的Ge浓度测量（Pb_（1-x）Ge_（x）Te）的电导率。所有Ge浓度的加热周期都不均匀，而冷却运行是线性的，尤其是2nd运行。计算并讨论了传导的活化能。对于x ＝ 0.05、0.15、0.25和0.35，观察到导电温度（154至473K）曲线中的异常行为。 Seebeck效应的结果表明，向PbTe中添加Ge导致了一种有前途的热电材料。

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