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首页> 外文会议>World renewable energy congress >Hydrogenated amorphous GaAs thin films are promising material for solar cells
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Hydrogenated amorphous GaAs thin films are promising material for solar cells

机译：氢化非晶GaAs薄膜是太阳能电池的有前途的材料

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Two types of hydrogenated a-GaAs films have been successfuly prepared by thermal and flash evaporation with a modified arrangements that gave very near stoichiometric composition as inferred by XPS. The hydrogenation was performed in situ through H-plasma enhanced by DC or AC voltages. The Ir spectra of the a-GaAs: H showed all the expected absorption modes. The optical hand gap of both thermally and flash evaporated films are found to be varied with hydrogen content in an opposite trend to variation of Urbach tail. The DC conductivity of both types of the films were observed to vary with annealign temperature up to about 473K and then becomes constant. This behavior was also true for the activation energy of conduction.
机译：已经通过热蒸发和闪蒸蒸发成功地制备了两种类型的氢化a-GaAs膜，其改性布置提供了XPS推断的非常接近化学计量的组成。氢化通过DC或AC电压增强的H-等离子体原位进行。 a-GaAs：H的Ir光谱显示了所有预期的吸收模式。发现热蒸发膜和闪蒸膜的光学手间隙都随氢含量而变化，这与乌尔巴赫尾巴的变化趋势相反。观察到两种类型的膜的直流电导率随最高约473K的退火温度而变化，然后变得恒定。对于传导的活化能也是如此。

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