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首页> 外文会议>World renewable energy congress >Absorber thickness dependence on CuInSe_2 based solar cells performance using CuIn precursors selenized using H_2Se gas
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Absorber thickness dependence on CuInSe_2 based solar cells performance using CuIn precursors selenized using H_2Se gas

机译：吸收剂厚度取决于使用H_2Se气体硒化的CuIn前驱体的基于CuInSe_2的太阳能电池性能

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摘要

The performance of CuInSe_2 based devices as a function of reaction period and CuIn precursors of different thicknesses reacted in a Chemical Vapor deposition (CVD) reactor using H_2Se gas at reaction temperature of 350 deg C is investigated. Progressive number of moles of CuInSe_2 and InSe phases in the Selenized CuIn precursors using a kinetic model as well as experimental number of moles calculated from XRD counts is also given. The study compliments efforts in development and operation of CuInSe_2 based solar cell commercial scale were found to be consistent with device performance with respect to reaction period. Good devices of efficiency greater than 10 percent can be obtained using an absorber layer with a trace of InSe phase provided the InSe moles approaches zero. Although the time for the precursors to react fully is independent of thickness, there is a limit in solar cell efficiency which can be obtained for each precursor thickness.
机译：研究了基于CuInSe_2的器件的性能与反应时间的函数以及不同厚度的CuIn前体在化学气相沉积（CVD）反应器中的反应温度，该反应器使用H_2Se气体在350摄氏度的反应温度下进行了反应。还使用动力学模型给出了硒化的CuIn前体中CuInSe_2和InSe相的渐进摩尔数，以及从XRD计数计算出的实验摩尔数。该研究补充了基于CuInSe_2的太阳能电池商业规模的开发和运行方面的努力，发现其与反应时间方面的器件性能是一致的。如果InSe的摩尔数接近零，则使用具有痕量InSe相的吸收层可以获得效率高于10％的良好器件。尽管前体完全反应的时间与厚度无关，但是对于每种前体厚度可以获得太阳能电池效率的限制。

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