Characteristics of InGaN/GaN Light-Emitting Diode with Si δ-Doped GaN Contact Layer

机译：Siδ掺杂GaN接触层的InGaN / GaN发光二极管的特性

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We have investigated the characteristics of InGaN/GaN blue light-emitting diodes (LEDs) with a Si δ-doped GaN contact layer. The Si 6-doping of the GaN contact layer in the devices could enhance the Si doping concentration and improve the lateral conductivity in the GaN:Si contact layer without cracking. The operating voltage and dynamic resistance of LEDs with a Si 6-doped GaN contact layer were 3.65 V and 27Ω at 20 mA, respectively. The operating voltage and dynamic resistance of conventional LEDs with a uniformly doped GaN:Si contact layer were 3.94 V and 32.3Ω at 20 mA, respectively. Also, the leakage currents at a reverse bias of ―10 V were 2.8μA for 6-doped LEDs and 29μA for uniformly doped LEDs. However, emission properties such as electroluminescence spectra and output power were not largely affected by utilizing a δ-doped GaN:Si contact layer in the devices.

机译：我们已经研究了具有Siδ掺杂GaN接触层的InGaN / GaN蓝色发光二极管（LED）的特性。器件中GaN接触层的Si 6掺杂可以提高Si掺杂浓度并改善GaN：Si接触层中的横向导电性而不会破裂。带有Si 6掺杂的GaN接触层的LED在20 mA时的工作电压和动态电阻分别为3.65 V和27Ω。具有均匀掺杂的GaN：Si接触层的常规LED在20 mA时的工作电压和动态电阻分别为3.94 V和32.3Ω。同样，对于6掺杂的LED，反向偏置电压为-10 V时的泄漏电流为2.8μA，对于均匀掺杂的LED为29μA。但是，在器件中利用δ掺杂的GaN：Si接触层不会对电致发光光谱和输出功率等发射特性产生很大的影响。

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《Fourth International Conference on Nitride Semiconductors》|2002年|p.163-166|共4页
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S.-R. JEON; M. S. JO; T.-V. HUMG; G. M. YANG; H. K. CHO; J. Y. LEE; S. W. HWANG; S. J. SON;
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中图分类无线电电子学、电信技术;
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Characteristics of InGaN/GaN Light-Emitting Diode with Si δ-Doped GaN Contact Layer

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