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首页> 外文会议>Fourth International Conference on Nitride Semiconductors >Band Structure Effects on the Transient Electron Velocity Overshoot in GaN
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Band Structure Effects on the Transient Electron Velocity Overshoot in GaN

机译：带结构对GaN中瞬态电子速度过冲的影响

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Time-resolved electroabsorption measurements on an AlGaN/GaN heterojunction p-i-n photo-diode have been used to study the transient electron velocity overshoot for transport in the c-direction in wurtzite GaN. The velocity overshoot increases with electric field up to ～320 kV/cm, at which field a peak velocity of 7.25 x 10~7 cm/s is attained within the first 200 fs after photoexcita-tion. However, theoretical Monte Carlo calculations incorporating a GaN full-zone band structure show that the majority of electrons do not attain sufficient energy to effect intervalley transfer until they are subjected to higher fields ( > 325 kV/cm). Insight into this behavior can be gleaned from the band nonparabolicity deduced from the constant energy surfaces in the Γ valley, which shows that the effective mass in the c-direction can be viewed as becoming larger at high k values.
机译：在AlGaN / GaN异质结p-i-n光电二极管上的时间分辨电吸收测量已用于研究纤锌矿GaN中沿c方向传输的瞬态电子速度过冲。电场超过〜320 kV / cm时，速度超调量增加，在光激发后的最初200 fs内，电场的峰值速度达到7.25 x 10〜7 cm / s。但是，结合了GaN全区带结构的理论Monte Carlo计算表明，大多数电子只有在经受更高的场强（> 325 kV / cm）时才能获得足够的能量来实现间隔传输。可以从Γ谷的恒定能量面推导出的带非抛物线来了解这种行为，这表明在高k值下，c方向上的有效质量可以视为变大。

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