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SELECTIVE IMAGING OF DEFECTS AND FAULTS IN Si SUBSTRATES BY ELECTROLUMINESCENCE DIFFERENTIATED IN TEMPERATURE

机译:温度下电致发光的硅基缺陷和断层的选择性成像

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The photographic surveying of electroluminescence (EL) under forward bias using a cooled Si-CCDcamera was proved to be a powerful diagnostic tool for investigating the quality of both single- and multi-crystallinesilicon solar cells. However, the EL intensity images of the specific areas were displayed in a grey scale which isleading to the difficulty to distinguish the sorts of those deficient areas. Since the intrinsic defects is more sensitive totemperature than the external faults (e.g. crack, broken finger), the change in solar cell temperature could offer thedifference in contrasts of EL intensity. In case of multi-crystalline Si solar cell, the EL images at high temperature(100 oC) displays much the lower contrasts at the intrinsic defects areas while the contrasts around external faultsareas seems to be the same when compare to the EL image at room temperature. These effects upon the measurementtemperature could be applied to categorize the types of deficiency in the crystalline Si solar cell.
机译:使用冷却的Si-CCD对正向偏压下的电致发光(EL)进行照相测量 事实证明,相机是用于研究单晶和多晶质量的强大诊断工具 硅太阳能电池。但是,特定区域的EL强度图像以灰度显示,即 导致难以区分那些不足的区域。由于固有缺陷对 温度高于外部故障(例如裂纹,手指折断)时,太阳能电池温度的变化可能会导致 EL强度的对比差异。在多晶硅太阳能电池的情况下,EL图像在高温下 (100 oC)在固有缺陷区域显示出低得多的对比度,而在外部缺陷周围显示出较低的对比度 与室温下的EL图像相比,面积似乎相同。这些对测量的影响 温度可用于对晶体硅太阳能电池缺陷的类型进行分类。

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