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首页> 外文会议>European photovoltaic solar energy conference >IMPACT OF IMPURITIES ON P-TYPE FRONT JUNCTION AND N-TYPE REAR JUNCTION CRYSTALLINE SI SOLAR CELLS
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IMPACT OF IMPURITIES ON P-TYPE FRONT JUNCTION AND N-TYPE REAR JUNCTION CRYSTALLINE SI SOLAR CELLS

机译：杂质对P型前结和N型后结晶体硅太阳能电池的影响

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In former publications often the statement is found, that minority carrier lifetime degradationdue to frequently detected impurities is less severe for n-type than for p-type multicrystalline(mc) Si solar cells. We investigated this issue quantitatively by means of numerical simulation withthe restriction that n- and p-type mc Si cells are manufactured by the same widespread industrial-typesolar cell production process. I. e., in case of the p-type cells, the carrier collecting junction is at thefront side, whereas it is at the rear side of the n-type cells. Consequently, the latter are more sensitiveto minority carrier lifetime degradation in the base. We found, that compared with the p-type counterpartsthe n-type cells are less affected by Fe_i, the most frequently detected impurity in mc Si, and bymoderate Mo_i concentrations. However, they are more sensitive to the also frequently detected impuritiesCr_i and Ti and to the unlikely contamination with Au_s und Pt_s. Hence, the universal statementoften found in literature, that contamination with impurities is less severe for n-type than for p-typecrystalline Si cells, is not true. In contrary, future work must show, whether the production of n-typerear junction cells must be restricted to monocrystalline CZ material because of the lower impurityconcentration compared with mc Si or if a cost-effective processing technology for front junction ntypemc Si must be developed.
机译：在以前的出版物中经常发现，少数载流子的寿命会降低 由于经常检测到的杂质，n型多晶硅的严重性不如p型多晶硅 （mc）硅太阳能电池。我们通过数值模拟对问题进行了定量研究 n型和p型mc Si电池由相同的广泛工业类型制造的限制 太阳能电池的生产过程。即，在p型单元的情况下，载流子收集结位于 正面，而它位于n型单元的背面。因此，后者更敏感 导致少数载流子寿命的降低。我们发现，与p型对应物相比 n型单元受mcSi中最常检测到的杂质Fe_i和 Mo_i浓度适中。但是，它们对也经常检测到的杂质更敏感 Cr_i和Ti以及不常见的Au_s和Pt_s污染。因此，普遍声明 通常在文献中发现，n型杂质的污染程度不如p型杂质严重 晶体硅电池，是不正确的。相反，未来的工作必须表明，是否生产n型 由于杂质含量较低，因此后结电池必须限于单晶CZ材料 浓度与mc Si相比，或者前接点ntype是否具有成本效益的加工技术 必须开发mc Si。

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