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首页> 外文会议>European photovoltaic solar energy conference >ANALYZING BACK CONTACTS OF SILICON SOLAR CELLS BY SUNS-VOC-MEASUREMENTS AT HIGH ILLUMINATION DENSITIES
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ANALYZING BACK CONTACTS OF SILICON SOLAR CELLS BY SUNS-VOC-MEASUREMENTS AT HIGH ILLUMINATION DENSITIES

机译：在高照明密度下通过SUNS-VOC测量分析硅太阳能电池的反接触

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This work demonstrates the feasibility and usefulness of a new method to analyse the quality of the rearcontact of silicon solar cells separated from other ohmic loss channels as e.g. the resistive loss in the front contact grid. Themeasurement is based on SunsVoc data at high illumination densities between 1 and 1000 suns. Generally the rear contactscan be described as a Schottky diode with a shunt resistor in parallel. At 1 sun operation conditions the back contact is fullydominated by the shunt showing an ohmic behaviour. However, at high illumination densities the Schottky diode can not beshunted completely anymore resulting in an increasing voltage which is opposed to the pn junction voltage. Finally a reversalpoint in the SunsVoc characteristics can be observed, i.e. the voltage decreases with increasing illumination density. Theevaluation of this characteristic behaviour is used to extract physical parameters like the barrier height of the contact.Additionally the contact quality is assessed for different contact types and base doping concentrations. The predicted contactquality is in good correlation with the measured fill factors of the cells.
机译：这项工作证明了一种分析后部质量的新方法的可行性和实用性。 与其他欧姆损耗通道分开的硅太阳能电池的接触，例如前接触栅中的电阻损耗。这 测量基于在1到1000个太阳之间的高光照密度下的SunsVoc数据。通常后触点 可以被描述为带有并联电阻的肖特基二极管。在1种日照条件下，后触点已完全闭合 由分流器控制，表现出欧姆特性。但是，在高照明密度下，肖特基二极管不能 完全分流导致电压升高，该电压与pn结电压相反。最终逆转 可以观察到SunsVoc特性中的一个点，即电压随照明密度的增加而降低。这 对该特性行为的评估用于提取物理参数，例如触点的势垒高度。 另外，针对不同的接触类型和基础掺杂浓度评估接触质量。预计的联系方式 质量与测得的细胞填充因子高度相关。

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