TEM CHARACTERIZATION OF A MULTICRYSTALLINE SI MATERIAL FOR PV APPLICATIONS

机译：光伏应用中多晶硅材料的TEM表征

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As cast multicrystalline silicon material (n-type) grown from metallurgical feedstock has been studied in termsof impurity elements and structural defects. A glow discharge mass spectrometer was used to analyse the level of impuritiesat certain depths. The dislocation density was measured using a high-speed optical scanning system and areas with highdislocation density were prepared for conventional and high resolution transmission electron microscopy. Silicon oxideprecipitates on dislocations and in grain boundaries were common. Four different types of multi-metal precipitatescontaining nickel, copper and iron were observed and identified in the grain boundaries by X-ray Energy DispersiveSpectroscopy.

机译：研究了从冶金原料中生长的铸造多晶硅材料（n型）。杂质元素和结构缺陷。使用辉光放电质谱仪分析杂质水平在某些深度。使用高速光学扫描系统和高密度区域测量位错密度为常规和高分辨率透射电子显微镜准备了位错密度。氧化硅位错和晶界中的沉淀是常见的。四种不同类型的多金属沉淀物通过X射线能量分散剂在晶界观察并鉴定了含有镍，铜和铁的合金。光谱学。

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《European photovoltaic solar energy conference》|2007年|p.1710-1714|共5页
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H. Nordmark; M. Di Sabatino; E. J. ?vrelid; J. C. Walmsley; R. Holmestad;
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正文语种
中图分类太阳能技术;太阳能电池;
关键词
multi-crystalline; silicon; defects; dislocations; TEM; GDMS;

机译：多晶硅;硅;缺陷;位错; TEM; GDMS;

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4. SIC PRECIPITATES IN BLOCK-CAST MULTICRYSTALLINE SILICON: A TEM CHARACTERIZATION [C] . Andriy Lotnyk, Jan Bauer, Otwin Breitenstein, European Photovoltaic Solar Energy Conference . 2008

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8. Applications of TEM to interface in materials [R] . Dahmen, U 1992

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TEM CHARACTERIZATION OF A MULTICRYSTALLINE SI MATERIAL FOR PV APPLICATIONS

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