• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文会议>European photovoltaic solar energy conference >Damages at Bypass Diodes by Induced Voltages and Currents in PV Modules Caused by Nearby Lightning Currents
【24h】

Damages at Bypass Diodes by Induced Voltages and Currents in PV Modules Caused by Nearby Lightning Currents

机译：附近的雷电流引起的光伏模块中感应电压和电流对旁路二极管的损坏

获取原文
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In 1990 – 1993 and during an EU project in 1998 – 2000, the PV laboratory of BFH-TI has carried out tests aboutsensitivity of PV modules against lightning currents flowing in or close to the frame of a PV module [1], [2], [3]. Forthese tests, impulse currents with i_(max) ≤ 120kA and di/dt_(max) ≤ 40kA/μs were used. It could be shown that even atmoderate distances the voltages induced in a module by such lightning currents may go up to several thousand volts.Such voltages could easily destroy bypass diodes. Due to increasing cell dimensions and therefore increasingcurrents, more and more Schottky diodes are used as bypass diodes, which have only quite low reverse voltageratings between 40 V and 100 V. In practical operation, such damages actually occur, but usually (and fortunately!)only at considerably higher peak induced voltages than the reverse voltage rating of the Schottky diode. First testswith such bypass diodes and simple wire loop models were performed in Dec. 2006 [4]. In this paper, this problem isanalysed more thoroughly, a model to calculate a rough estimate of the voltages and currents stressing the bypassdiodes is introduced and some results of practical measurements at bypass diodes in real modules are given [5].
机译：在1990年至1993年以及在1998年至2000年的欧盟项目中，BFH-TI的光伏实验室进行了有关 光伏组件对流入或靠近光伏组件框架[1]，[2]，[3]的雷电流的敏感度。为了 在这些测试中，使用了i_（max）≤120kA和di / dt_（max）≤40kA /μs的脉冲电流。可以证明，即使在 在中等距离内，由此类雷电流在模块中感应的电压可能会上升至几千伏。 这样的电压很容易破坏旁路二极管。由于单元尺寸增大，因此增大 电流，越来越多的肖特基二极管被用作旁路二极管，其反向电压非常低 额定电压在40 V至100 V之间。在实际操作中，这种损坏实际上会发生，但通常（幸运的是！） 仅在峰值感应电压比肖特基二极管的反向额定电压高得多的情况下。初次测试 这种旁路二极管和简单的线环路模型于2006年12月进行[4]。在本文中，这个问题是 经过更全面的分析，可以使用一个模型来计算对旁路施加的电压和电流的粗略估计 介绍了二极管，并给出了实际模块中旁路二极管的一些实际测量结果[5]。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号