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Pulse CVD Deposition of Ru Films from Ru(II)(η)~3-Allylic Complex

机译：Ru（II）（η）〜3-烯丙基络合物的Ru膜的脉冲CVD沉积

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A ruthenium(II) (η)~3-allylie complex Ru(nbd)(allyl)_2 (nbd = norbornadiene) was used as precursor for pulse CVD thin Ru films on silicon substrates. Preliminary study of thermal behavior of precursor was carried out: temperature dependence of vapor pressure was measured by means of Knudsen method with mass spectrometric analysis of gas phase composition; thermodynamic parameters of sublimation process were calculated. By means of high temperature mass spectrometry in situ the process of vapor thermo destruction was investigated in vacuum: vapor decomposition starts at relatively low temperature (about 180°C); the major gas by-products are the radicals of ligands - allyl, norbornadiene and their combinations. Deposition of Ru films was carried out in vacuum and hydrogen. XPS, AFM and HREM study have shown metal state of Ru in films. In the presence of hydrogen the film consists of Ru particles with size of 3.5 nm. Sample surface is smooth; mean square roughness is 0.17 nm.

机译：钌（II）（η）〜3-烯丙基络合物Ru（nbd）（烯丙基）_2（nbd =降冰片二烯）被用作硅衬底上脉冲CVD Ru薄膜的前体。对前驱体的热行为进行了初步研究：利用Knudsen方法对气相组成进行质谱分析，测量了蒸汽压的温度依赖性。计算了升华过程的热力学参数。借助于高温质谱法，在真空中研究了蒸气的热破坏过程：蒸气的分解在相对较低的温度（约180°C）下开始。主要的气体副产物是配体的自由基-烯丙基，降冰片二烯及其组合。 Ru膜的沉积在真空和氢气中进行。 XPS，AFM和HREM研究表明，薄膜中存在Ru的金属态。在氢存在下，膜由尺寸为3.5 nm的Ru颗粒组成。样品表面光滑;均方根粗糙度为0.17 nm。

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《EuroCVD 17/CVD 17》|2009年|p.881-885|共5页
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S.V. Trubin; N.B. Morozova; P.P. Semyannikov; A.A. Bessonov; N.V. Gelfond; I.K. Igumenov;
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中图分类真空镀与气相镀法;
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3. Synthesis and characterization of tris(beta-ketoiminato)ruthenium(III) complexes: Potential precursors for CVD of Ru and RuO2 thin films [J] . Chou TY, Lai YH, Chen YL, Chemical vapor deposition: CVD . 2004,第3期

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4. Pulse CVD Deposition of Ru Films from Ru(II) η~3-Allylic Complex [C] . S. V. Trubin, N. B. Morozova, P. P. Semyannikov, Meeting of the Electrochemical Society . 2009

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Pulse CVD Deposition of Ru Films from Ru(II)(η)~3-Allylic Complex

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