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首页> 外文会议>Electronics Division Meeting of the Ceramic Society of Japan >Effect of the Annealing Temperature on Dielectric Properties of Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 Films Prepared by MOCVD
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Effect of the Annealing Temperature on Dielectric Properties of Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 Films Prepared by MOCVD

机译：退火温度对MoCVD制备的Bi_（1.5）Zn_（1.0）Nb_（1.5）O_7膜的介电性能的影响

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摘要

Effect of annealing temperature on the dielectric properties of Bi_(1.5)Zn_(1.0)Nb_(1.5)O_7 films prepared on (111)Pt//(001)Al_2O_3 and (111)Pt/fused silica substrates by MOCVD was investigated. The tunability and the inverse of the dielectric loss [1/ (tan δ)] increased with increasing annealing temperature. Relative dielectric constant and temperature coefficient of the capacitance (TCC) increased with the crystallinity of the films. On the other hand, (1/tan δ) was independent of the crystallinity of the films, but was dramatically increased by the annealing.
机译：研究了退火温度对在（111）Pt //（001）Al_2O_3和（111）Pt /熔融二氧化硅基底上制备的Bi_（1.5）Zn_（1.0）Nb_（1.5）Nb_（1.5）O_7膜的介电性能的影响。随着退火温度的增加，电介质损耗[1 /（TANδ）]的可调谐和逆。电容（TCC）的相对介电常数和温度系数随薄膜的结晶度而增加。另一方面，（1 /TANδ）与薄膜的结晶度无关，但通过退火显着增加。

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