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首页> 外文会议>Electronics Division Meeting of the Ceramic Society of Japan >Electrical degradation caused by electro-static discharge pulse in ZnO-based multilayer varistor
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Electrical degradation caused by electro-static discharge pulse in ZnO-based multilayer varistor

机译：基于ZnO的多层压敏电阻中的电静电放电脉冲引起的电劣化

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The degradation of ZnO-based multilayer ceramic varistors (MLCV) caused by electro-static discharge (ESD) and its mechanism on Schottky barriers formed at grain boundaries were examined. ESD is an extremely fast pulse which rise time is less than 1 n sec, and the typical voltage is around 8kV. Two degradations of current-voltage (I-V) characteristics occurred depending on ESD-voltage. The minor degradation at the early stage was caused only in the low-current region by a slight ESD pulse (=0.4kV). In contrast, the major degradation occurred over the wide current range of 1μ to 1mA by a highly ESD-voltage (= 8kV). The failure of Schottky barriers by ESD was produced partially in the microstructure. The large degradation was probably caused by the extension of region of broken barriers. The properties of barriers among boundaries and the microstructure play a crucial role in the degradation. In addition, using C-V analysis was found to be extremely valuable for the detection of degradation in MLCV than I-V property.
机译：研究了由电静电放电（ESD）引起的ZnO的多层陶瓷压敏电阻（MLCV）及其对形成在晶界形成的肖特基屏障的机制的劣化。 ESD是一个极快的脉冲，上升时间小于1 n秒，典型电压约为8kV。根据ESD电压发生电流电压（I-V）特性的两个降低。早期阶段的微小降解仅在低电流区域中通过轻微的ESD脉冲（= 0.4kV）引起。相反，通过高度ESD电压（= 8kV），在1μ至1mA的宽电流范围内发生重大劣化。通过ESD的肖特基屏障的故障部分地在微观结构中产生。大的劣化可能是由破碎屏障区域的延伸引起的。边界屏障的性质和微观结构在降解中发挥着至关重要的作用。另外，发现使用C-V分析对于MLCV的降解而不是I-V财产来说是非常有价值的。

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