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首页> 外文会议>International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology;ECTI-CON 2009 >Multiplication of photocurrent in silicon planar metal-semiconductor-metal structures
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Multiplication of photocurrent in silicon planar metal-semiconductor-metal structures

机译：硅平面金属-半导体-金属结构中光电流的倍增

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摘要

DC photocurrent gain properties of planar metal-semiconductor-metal (MSM) optical sensor structures on have been investigated experimentally. The test structure has two co-planar Mo-Si Schottky-barrier junctions on silicon of resistivity 9-12 Omega-cm and the electrode separation is 20 mum. The current-voltage (I-V) characteristics measurements under illumination in visible range showed a rapid increase in photocurrent at higher biases examined. From the temperature, the dependence of I-V characteristics and noise measurements, such photocurrent increase was ascribes to avalanche multiplication of carriers photogenerated in the Schottky junction reversed-biased. From low-frequency (10-50 kHz) signal measurements, it was found that multiplication factor larger than 100 at 10 kHz and 30 at 50 kHz was achieved.
机译：实验研究了平面金属-半导体-金属（MSM）光学传感器结构的直流光电流增益特性。该测试结构在电阻率为9-12Ω-cm的硅上具有两个共面的Mo / n-Si肖特基势垒结，电极间距为20μm。在可见光范围内照明下的电流-电压（I-V）特性测量结果显示，在更高的偏压下，光电流会迅速增加。从温度，IV特性和噪声测量的依赖性来看，这种光电流的增加归因于在反向偏置的肖特基结中光生载流子的雪崩倍增。通过低频（10-50 kHz）信号测量，发现在10 kHz时实现了大于100的乘法因子，在50 kHz时实现了30的乘法因子。

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