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Cobalt-60, proton and electron irradiation of a radiation-hardened active pixel sensor

机译:辐射硬化有源像素传感器的钴60,质子和电子辐照

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We present the key results of multiple radiation characterization campaigns of the HAS2 radiation-hardened active pixel sensor (APS). These characterizations encompassed Cobalt-60 total ionizing dose, proton and electron displacement damage tests at room and low temperature. This gives us the opportunity to discuss the influence on this APS of two phenomena that had been previously observed on charge coupled devices (CCDs): room temperature displacement damage defect annealing, and non-ionizing energy loss (NIEL) scaling between electron and proton irradiations.
机译:我们介绍了HAS2辐射硬化有源像素传感器(APS)的多次辐射表征活动的关键结果。这些表征包括Cobalt-60的总电离剂量,质子和电子位移损伤测试(在室温和低温下)。这使我们有机会讨论以前在电荷耦合器件(CCD)上观察到的两种现象对该APS的影响:室温位移损坏缺陷退火,以及电子和质子辐照之间的非电离能量损失(NIEL)缩放。

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