首页> 外文会议>Eighteenth International Symposium on Semiconductor Manufacturing >Methods to eliminate pattern collapse in mass production by the resist replacement without changing model-based optical-proximity-correction
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Methods to eliminate pattern collapse in mass production by the resist replacement without changing model-based optical-proximity-correction

机译:在不更改基于模型的光学邻近校正的情况下,通过抗蚀剂替换来消除批量生产中的图案崩溃的方法

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Pattern collapse issue was successfully eliminated by the addition of hydrophobic and transparent additives into the resist. The additives form 25 nm-thick layer at the top of the new resist. The layer reduces maximum-tensile-stress acting on resist patterns by 22% due to the hidrophobicity. It was also found that the layer hardly affected the optical-proximity-effect (Difference of thorough-pitch CD: −0.8 ∼ 0.6 nm). As a result, the same OPC could be used without further modification in the OPC model.
机译:通过向抗蚀剂中添加疏水和透明添加剂,成功消除了图案塌陷问题。添加剂在新抗蚀剂的顶部形成25 nm厚的层。由于疏水性,该层将作用在抗蚀剂图案上的最大拉伸应力降低了22%。还发现该层几乎不影响光学邻近效应(全间距CD的差:-0.8〜0.6nm)。结果,可以在不对OPC模型进行进一步修改的情况下使用相同的OPC。

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