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Effects of bulk and grain boundary recombination on the efficiency of columnar-grained crystalline silicon film solar cells

机译:体和晶界复合对柱状晶态硅薄膜太阳能电池效率的影响

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Columnar-grained polycrystalline silicon films deposited at low temperatures are promising materials for use in thin-film photovoltaics. We study the effects of recombination at grain boundaries, bulk intragranular recombination, grain size, and doping in such structures with two-dimensional device physics simulations, explicitly modeling the full statistics and electrostatics of traps at the grain boundary. We characterize the transition from grain-boundary-limited to bulk-lifetime-limited performance as a function of intergranular defect density and find that higher bulk lifetimes amplify grain boundary recombination effects in the intermediate regime of this transition. However, longer bulk lifetimes ultimately yield higher efficiencies. Additionally, heavier base doping is found to make performance less sensitive to grain boundary defect density.
机译:在低温下沉积的柱状晶粒多晶硅薄膜是用于薄膜光伏的有前途的材料。我们使用二维器件物理模拟研究了晶界处的重组,晶粒内复合,晶粒尺寸和掺杂在此类结构中的作用,明确地对晶界处陷阱的完整统计数据和静电学进行了建模。我们表征了从晶界受限性能到整体寿命受限性能的转变,作为晶间缺陷密度的函数,并且发现更高的整体寿命会在这种过渡的中间状态下放大晶界复合效应。但是,较长的散装寿命最终会带来更高的效率。另外,发现较重的基极掺杂使性能对晶界缺陷密度较不敏感。

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