Vertical integration of ZnO nanowires into asymmetric Pt/ZnO/Ti schottky UV photodiodes

机译：ZnO纳米线垂直集成到不对称的Pt / ZnO / Ti肖特基UV光电二极管中

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The direct vertical integration of zinc-oxide (ZnO) nanowires to form rectifying UV photodiodes featuring asymmetric Schottky bottom platinum-ZnO junctions and ohmic top ZnO-titanium contacts has been demonstrated. Current-voltage electrical measurements of a prototype ZnO nanowire photodetector exhibit the characteristic rectifying behavior under dark conditions. Upon illumination with a 325 nm-wavelength HeCd UV laser, a magnitude-increase in the photocurrent was measured in the device. This versatile, highly-scalable nanowire device architecture could serve as the platform for future nano-electro-mechanical system (NEMS) applications, including nano-image sensors and high-density memory devices.

机译：已经证明了氧化锌（ZnO）纳米线的直接垂直集成，以形成具有不对称肖特基底部铂-ZnO结和欧姆顶部ZnO-钛触点的整流UV光电二极管。原型ZnO纳米线光电探测器的电流-电压电学测量在黑暗条件下表现出特征性的整流行为。用325 nm波长的HeCd UV激光器照射后，在该设备中测量了光电流的幅度增加。这种通用的，高度可扩展的纳米线器件架构可以作为未来纳米机电系统（NEMS）应用的平台，包括纳米图像传感器和高密度存储器件。

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《2011 IEEE 24th International Conference on Micro Electro Mechanical Systems》|2011年|p.1382-1385|共4页
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Yang C.-Y.P.; Liwei Lin;
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1. High-speed photoresponse properties of ultraviolet (UV) photodiodes using vertically aligned Al:ZnO nanowires [J] . Amiruddin R., Santhosh Kumar M. C. Physica status solidi . 2017,第9期

机译：使用垂直排列的Al：ZnO纳米线的紫外（UV）光电二极管的高速光响应特性
2. Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity [J] . Youngmin Lee, Deuk Young Kim, Sejoon Lee Nanomaterials . 2019,第5期

机译：具有增强的横向肖特基势垒均质性的低功率石墨烯/ ZnO肖特基UV光电二极管
3. Low Leakage Current ZnO Nanowire Schottky Photodiodes Built by Dielectrophoretic Contact [J] . Pau Jose Luis, Waters Joseph, Rivera Elmer, Electron Device Letters, IEEE . 2015,第8期

机译：通过介电接触构建的低泄漏电流ZnO纳米线肖特基光电二极管
4. Vertical integration of ZnO nanowires into asymmetric Pt/ZnO/Ti schottky UV photodiodes [C] . Yang C.-Y.P., Liwei Lin International Conference on Micro Electro Mechanical Systems . 2011

机译：ZnO纳米线将ZnO纳米线的垂直整合到非对称Pt / ZnO / Ti肖特基紫外光二极管中
5. Growth of Zn-Polar BeMgZnO/ZnO Heterostructure with Two Dimensional Electron Gas (2DEG) and Fabrication of Silver Schottky Diode on BeMgZnO/ZnO Heterostructure [D] . Ullah, Md Barkat 2017

机译：二维电子气（2DEG）生长的Zn-极性BeMgZnO / ZnO异质结构和BeMgZnO / ZnO异质结构上银肖特基二极管的制备
6. Low-Power Graphene/ZnO Schottky UV Photodiodes with Enhanced Lateral Schottky Barrier Homogeneity [O] . Youngmin Lee, Deuk Young Kim, Sejoon Lee 2019

机译：具有增强的横向肖特基势垒均质性的低功率石墨烯/ ZnO肖特基UV光电二极管
7. Low Leakage Current ZnO Nanowire Schottky Photodiodes Built by Dielectrophoretic Contact [O] . Pau, Jose Luis, Waters, Joseph, Rivera, Elmer, 2015

机译：由介电电泳接触构成的低漏电流ZnO纳米线肖特基光电二极管

Vertical integration of ZnO nanowires into asymmetric Pt/ZnO/Ti schottky UV photodiodes

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