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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >FABRICATION OF CdTe ULTRA THIN FILM SOLAR CELL WITH WIDE BANDGAP WINDOW LAYER OF CdS:O BY MAGNETRON SPUTTERING
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FABRICATION OF CdTe ULTRA THIN FILM SOLAR CELL WITH WIDE BANDGAP WINDOW LAYER OF CdS:O BY MAGNETRON SPUTTERING

机译：CDTE超薄薄膜太阳能电池的制造与CDS宽带隙窗层：O通过磁控溅射

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Oxygenated cadmium sulfide (CdS:O) thin films have been prepared by reactive RF magnetron sputtering with varying the O partial pressure from 0.08 mTorr to 0.18 mTorr. The quantitative results from the X-ray photoelectron spectroscopy (XPS) show that the relative concentration of oxygen atoms increases considerably with O partial pressure and O atoms are mostly combined with the S atoms to form SO4 complexes. The bandgap of the films were found in the range of 2.65 eV-2.74 eV.The film's crytallinity was observed to reduce with the increase of O partial pressure. The complete cell was fabricated by sputtering technique with a novel configuration of 'glass/FTO/ZnO:Sn/CdS:O/CdTe/Cu:C/Ag'. The performances of the ultra-thin cells (CdTe ～ 1μm) were evaluated under illumination of 1.5 AM, and the efficiency of 10.27% was achieved so far.
机译：通过反应性RF磁控溅射制备含氧氧化镉（CDS：O）薄膜，其改变0.08mTorr至0.18 mtorr的o分压。来自X射线光电子能谱（XPS）的定量结果表明，氧原子的相对浓度随着部分压力和O原子主要与S原子组合形成SO4络合物。薄膜的带隙在2.65 eV-2.74eV的范围内。观察到薄膜的呼链保持，以随着o分压的增加而减少。通过用“玻璃/ FTO / ZnO：Sn / Cds：O / CdTe / Cu：C / Ag”的新配置，通过溅射技术制造完整的细胞。在1.5 AM的照明下评价超薄细胞（CDTE〜1μm）的性能，到目前为止，实现了10.27％的效率。

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