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Investigation on the third-order optical nonlinearity of CdS using 4f coherent imaging technique with phase object

机译:相位对象的4f相干成像技术研究CdS的三阶光学非线性

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The third-order optical nonlinearities of semiconductor CdS are investigated using 4f nonlinear image technique with phase object at 745 nm. The measurement method is based on the 4f coherent optical processor system in Fourier optics. The nonlinear parameters of sample can be verified by numerical fitting the nonlinear image at the output plane of 4f system which obtained by a CCD camera. Using one-single-shot, the two-photon absorption coefficient P and nonlinear refraction index n_2 of the CdS which arranged at the Fourier plane are determined simultaneously. The experimental results shows CdS has reverse saturable absorption and self-defocusing effect at 745 nm, indicating this material is a good candidate for future photonics applications.
机译:利用4f非线性图像技术研究了相位差在745 nm处的半导体CdS的三阶光学非线性。测量方法基于傅立叶光学系统中的4f相干光学处理器系统。样品的非线性参数可以通过对由CCD摄像机获得的4f系统输出平面上的非线性图像进行数值拟合来验证。使用单次发射,同时确定了布置在傅立叶平面上的CdS的双光子吸收系数P和非线性折射率n_2。实验结果表明,CdS在745 nm具有反向饱和吸收和自散焦作用,表明该材料是未来光子学应用的良好选择。

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