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首页> 外文会议>CICC-7;China international conference on high-performance ceramics >Microwave Synthesis of Nano SiC Doping Mg(B_(1-2x)(SiC)_x)_2 Superconductor and Superconductivity
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Microwave Synthesis of Nano SiC Doping Mg(B_(1-2x)(SiC)_x)_2 Superconductor and Superconductivity

机译：微波合成纳米SiC掺杂Mg（B_（1-2x）（SiC）_x）_2超导体和超导电性

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摘要

Superconductor samples Mg(B_(1-2x)(SiC)_x)_2 (x=0,5%, 10%) are synthesized from nano SiC, Mg and amorphous boron powders by microwave direct synthesis in a short time. Powder X-ray diffraction (XRD) analysis indicates that the phases of the synthesis sample are MgB_2 (major phase) and a small amount of MgO and Mg_2Si. The main peaks of MgB_2, (100), (101), (002) and (110) are shift to the higher diffraction angle position and the width of half height of the diffraction plane is broaden for the SiC doping Mg(B_(1-2x)(SiC)_x)_2, which show that the B positions of MgB_2 are partly substituted and the grains of MgB_2 are fine. Scanning electron microscope (SEM) observation shows that the MgB_2 grain size is very small and the sample is tightness (compact). The onset superconducting transition temperature of the Mg(B_(1-2x)(SiC)_x)_2 (x=0,5%, 10%) samples measured by magnetization measurement are about 37.6 K, 37.0 K, 36.8 K respectively. The critical current density J_c are calculated according to the Bean model from the magnetization hysteresis loop of the slab Mg(B_(1-2x)(SiC)_x)_2 (x=0, 5%, 10%) samples. The critical current density J_c of nano SiC doping Mg(B_(1-2x)(SiC)_x)_2 samples are greatly enhanced. In higher external magnetic field, the J_c of 10% SiC doped sample is the highest; in lower external magnetic field, the J_c of 5% SiC doped sample is the highest; while in the whole external magnetic field, the J_c of undoped sample is the lowest.
机译：纳米SiC，Mg和非晶态硼粉通过微波直接合成在短时间内合成了超导体样品Mg（B_（1-2x）（SiC）_x）_2（x = 0,5％，10％）。粉末X射线衍射（XRD）分析表明，合成样品的相为MgB_2（主相）和少量的MgO和Mg_2Si。 MgB_2，（100），（101），（002）和（110）的主峰向SiC掺杂Mg（B_（1 -2x）（SiC）_x）_2，表明MgB_2的B位置被部分取代，并且MgB_2的晶粒细小。扫描电子显微镜（SEM）观察表明，MgB_2晶粒非常小，并且样品致密（紧凑）。通过磁化测量测得的Mg（B_（1-2x）（SiC）_x）_2（x = 0,5％，10％）样品的开始超导转变温度分别约为37.6 K，37.0 K和36.8K。根据Bean模型，从平板Mg（B_（1-2x）（SiC）_x）_2（x = 0、5％，10％）样品的磁化磁滞回线计算出临界电流密度J_c。纳米SiC掺杂Mg（B_（1-2x）（SiC）_x）_2样品的临界电流密度J_c大大提高。在较高的外部磁场中，掺杂10％SiC的样品的J_c最高;在较低的外部磁场中，掺杂5％SiC的样品的J_c最高;而在整个外部磁场中，未掺杂样品的J_c最低。

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