An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology

机译：35nm变形锚杆技术中的H波段低噪声放大器MMIC

获取原文

页面导航

摘要
著录项
相似文献
相关主题

摘要

In this paper, we present the development and characterization of an H-band (220 – 325 GHz) low-noise amplifier MMIC, realized in metamorphic HEMT technology with a gate length of 35 nm. The active devices in the realized three-stage LNA are common-source and common-gate transistors connected in cascode configuration. The LNA circuit achieves a linear gain of 26.3 dB with a 3-dB-bandwidth from 218 to 260 GHz. The measured noise figure of the LNA is 6.1 dB in the frequency range around 243 GHz.

机译：在本文中，我们介绍了H频带（220-325GHz）低噪声放大器MMIC的开发和表征，在变质HEMT技术中实现，栅极长度为35nm。实现的三级LNA中的有源器件是Cascode配置中连接的公共源极和公共栅极晶体管。 LNA电路实现了26.3dB的线性增益，具有3-DB带宽从218到260 GHz。 LNA的测量噪声系数为6.1dB，频率范围为243 GHz。

著录项

来源
《European Microwave Integrated Circuits Conference》|2012年||共4页
会议地点
作者
Weber Rainer; Hurm Volker; Massler Hermann; Weissbrodt Ernst; Tessmann Axel; Leuther Arnulf; Narhi Tapani; Kallfass Ingmar;
展开▼
作者单位

展开▼
会议组织
原文格式 PDF
正文语种
中图分类 TN47-53;
关键词
H-band (220–325 GHz); cascode; grounded coplanar waveguide (GCPW); low-noise amplifier (LNA); metamorphic high electron mobility transistor (mHEMT); millimeter-wave monolithic integrated circuit (MMIC); noise figure (NF);

机译：H-BAND（220-325 GHz）;CASCODE;接地COPLANAR波导（GCPW）;低噪声放大器（LNA）;变质高电子迁移晶体管（MHEMT）;毫米波单片集成电路（MMIC）;噪声图（NF 的）;

相似文献

外文文献
中文文献
专利

1. 220 GHz low-noise amplifier MMICs and modules based on a high performance 50 nm metamorphic HEMT technology [J] . A. Tessmann, A. Leuther, H. Massler, Physica Status Solidi. C, Conferences and critical reviews . 2007,第5期

机译：基于高性能50 nm变形HEMT技术的220 GHz低噪声放大器MMIC和模块
2. 243 GHz low-noise amplifier MMICs and modules based on metamorphic HEMT technology [J] . AXEL TESSMANN, VOLKER HURM, ARNULF LEUTHER, International Journal of Microwave and Wireless Technologies . 2014,第3a4期

机译：基于变质HEMT技术的243 GHz低噪声放大器MMIC和模块
3. X-BAND MMIC LOW-NOISE AMPLIFIER MMIC ON SiC SUBSTRATE USING 0.25-μm ALGaN/GaN HEMT TECHNOLOGY [J] . Woojin Chang, Gye-Ik Jeon, Young-Rak Park, Microwave and optical technology letters . 2014,第1期

机译：使用0.25μmALGaN / GaN HEMT技术在SiC衬底上的X波段MMIC低噪声放大器MMIC
4. An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology [C] . Weber Rainer, Hurm Volker, Massler Hermann, European Microwave Integrated Circuits Conference . 2012

机译：采用35 nm变质HEMT技术的H波段低噪声放大器MMIC
5. MMIC power amplifiers in gallium nitride HEMT and indium phosphide HBT technologies. [D] . Paidi, Vamsi K. 2004

机译：氮化镓HEMT和磷化铟HBT技术中的MMIC功率放大器。
6. 100 nm AlSb/InAs HEMT for Ultra-Low-Power Consumption Low-Noise Applications [O] . Cyrille Gardès, Sonia Bagumako, Ludovic Desplanque, -1

机译：用于超低功耗低噪声应用的100MTnm AlSb / InAs HEMT
7. Low-Noise W-Band Amplifiers for Radiometer Applications Using a 70 nm Metamorphic HEMT Technologyud [O] . Schwörer C., Tessmann A., Leuther A., 2003

机译：使用70 nm变质HEMT技术的辐射计应用中的低噪声W波段放大器 ud
8. Manufacturable Tri-Stack AlSb/InAs HEMT Low-Noise Amplifiers Using Wafer-Level-Packaging Technology for Light-Weight and Ultralow-Power Applications [R] . Chou, Y. C., Chang-Chien, P., Yang, J. M., 2009

机译：可制造的三叠层alsb / Inas HEmT低噪声放大器，采用晶圆级封装技术，适用于轻量级和超低功耗应用

An H-band low-noise amplifier MMIC in 35 nm metamorphic HEMT technology

摘要

著录项

相似文献

相关主题

期刊订阅