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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >LIGHT-TRAPPING IMPROVEMENT OF P-I-N SILICON-BASED SOLAR CELLS WITH NEW REFRACTIVE-INDEX MATCHING LAYER INSERTED AT ZNO/P INTERFACE
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LIGHT-TRAPPING IMPROVEMENT OF P-I-N SILICON-BASED SOLAR CELLS WITH NEW REFRACTIVE-INDEX MATCHING LAYER INSERTED AT ZNO/P INTERFACE

机译：在ZNO / P界面插入新的折射率匹配层的P-I-N硅基太阳能电池的光陷阱改进

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As reported, TiO_2 /ZnO layers were inserted at TCO/Si interfaces in order to suppress optical reflectionloss. However, such TiO_2 /ZnO layers have to be coated by sputtering which is different from PECVD used for thin-filmsilicon-based solar cell fabrication. Recently, n-SiO_x fabricated by PECVD, has widely been studied as a window layer inn-i-p solar cells or a front anti-reflection layer (FAL) inserted into glass/TCO interface. Here in this work, we havestudied how to apply this n-μc-SiO_x as a new refractive-index matching layer inserted into ZnO/ p-layer interface (FALp).In this study, we have theoretically and experimentally investigated the optical effect of a FALp on the solar cellperformance. Optical calculation of FALp was firstly performed in order to estimate the optimal thickness and refractiveindex (n) of FALp. Next, the optimization of n-μc-SiO_x films was experimentally carried out by investigating the effect ofCO_2 flow rate on the properties of films. Finally, the performance of silicon-based thin film solar cells, i.e., both of a-Si:Hand μc-Si:H solar cells, with FALp optimized up to now was analyzed. It was found that by employing the FALp thespectral response, especially in range 500 to 900 nm, was improved even though the spectral response at shortwavelength region was decreased due to absorption loss resulted from un-optimized thickness. With this FALp layer theJsc for the μc-Si:H solar cell improved by ～0.4 mA/cm~2. The results show that this novel n-μc-SiO_x:H film can be usedas a front anti-reflection layer inserted at ZnO/p interface as well instead of TiO_2 /ZnO.
机译：据报道，为了抑制光反射，在TCO / Si界面处插入了TiO_2 / ZnO层 失利。然而，这种TiO_2 / ZnO层必须通过溅射来涂覆，这与用于薄膜的PECVD不同。 硅基太阳能电池制造。近来，已经广泛地研究了通过PECVD制造的n-SiO_x作为玻璃中的窗口层。 n-i-p太阳能电池或插入玻璃/ TCO界面的前减反射层（FAL）。在这项工作中，我们有 研究了如何将此n-μc-SiO_x作为插入ZnO / p层界面（FALp）的新折射率匹配层。 在这项研究中，我们在理论上和实验上研究了FALp对太阳能电池的光学效应 表现。首先进行FALp的光学计算以估算最佳厚度和折光率 FALp的索引（n）。接下来，通过研究N-μc-SiO_x膜的效果，对N-μc-SiO_x膜进行了优化。 CO_2流速对薄膜性能的影响。最后，硅基薄膜太阳能电池（即a-Si：H两者）的性能 以及迄今为止最优化的FALp的μc-Si：H太阳能电池已经进行了分析。发现使用FALp可以 即使短时的光谱响应也改善了光谱响应，特别是在500至900 nm范围内 由于未优化的厚度导致吸收损失，导致波长区域减小。有了这个FALp层， μc-Si：H太阳能电池的Jsc提高了〜0.4 mA / cm〜2。结果表明，该新型n-μc-SiO_x：H薄膜可用于 作为前减反射层的薄膜，也可以代替TiO_2 / ZnO插入ZnO / p界面。

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