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首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >SILICON QUANTUM DOTS IN PHOTOVOLTAIC DEVICES: DEVICE FABRICATION, CHARACTERIZATION AND COMPARISON OF MATERIALS
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SILICON QUANTUM DOTS IN PHOTOVOLTAIC DEVICES: DEVICE FABRICATION, CHARACTERIZATION AND COMPARISON OF MATERIALS

机译：光伏器件中的硅量子点：器件的制造，表征和材料比较

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Silicon nanocrystals (Si NCs) embedded in Si-based dielectrics provide a Si-based high band gapmaterial (1.7 eV) and enable the construction of all-crystalline Si tandem solar cells. However, Si nanocrystalformation involves high-temperature annealing which deteriorates the properties of any previously establishedselective contacts. The inter-diffusion of dopants during high-temperature annealing alters Si NC formation and limitsthe built-in voltage. Furthermore, most devices presented so far also involve electrically active bulk Si and thereforedo not allow a clear separation of the observed photovoltaic effect of the quantum dot layer from that of the bulk Sisubstrate. A membrane route is presented for quantum dot based p-i-n solar cells to overcome these limitations. Inthis approach, the formation of both selective contacts is carried out after high-temperature annealing and thereforenot affected by the latter. P-i-n solar cells are investigated with Si NCs embedded in silicon carbide in the intrinsicregion. Open-circuit voltages of up to 370 mV are shown for the NC layer. An optical model of the device ispresented for improving the cell current. Finally device failure due to damaged insulation layers is analysed byelectron beam induced current measurements.
机译：嵌入硅基电介质中的硅纳米晶体（Si NCs）提供了硅基高带隙 材料（1.7 eV），并能够构建全晶硅串联太阳能电池。但是，Si纳米晶体 形成过程涉及高温退火，这会使先前建立的任何性能均变差 选择性接触。高温退火过程中掺杂剂的相互扩散改变了Si NC的形成并限制了 内置电压。此外，到目前为止介绍的大多数器件还包含电活性块体硅，因此 不允许将观察到的量子点层的光电效应与块状Si的光电效应清楚地分开 基质。提出了用于基于量子点的p-i-n太阳能电池的膜途径，以克服这些限制。在 这种方法是在高温退火之后形成两个选择性触点，因此 不受后者的影响。利用嵌入在碳化硅中的Si NC来研究P-i-n太阳能电池 地区。对于NC层，显示了高达370 mV的开路电压。该设备的光学模型是 提出用于改善电池电流。最后，通过分析绝缘层损坏导致的设备故障 电子束感应电流测量。

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