Mechanisms of CMP Pressure Profile Generation

机译：CMP压力分布图生成的机理

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In this work we develop an analytical model of the contact mechanics governing pressure profile generation in CMP. This understanding makes it possible to i) improve CMP head designs, and ii) develop a simple and reliable process for improving pressure uniformity, increasing the usable area of the wafer. This is demonstrated by using the process to reduce WIWNU to <3% over the entire wafer. This increases the usable wafer area to nearly 100%.

机译：在这项工作中，我们开发了用于控制CMP中压力分布生成的接触力学的分析模型。这种理解使得有可能i）改进CMP头的设计，并且ii）开发一种简单而可靠的工艺来改善压力均匀性，增加晶片的可用面积。这可以通过使用将整个晶片上的WIWNU降低到<3％的工艺来证明。这将可用晶圆面积增加到近100％。

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《Annual meeting of the American Society for Precision Engineering》|2012年|54-57|共4页
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Robert M. Panas; Prosper Nyovanie; Lucy Du; Martin L. Culpepper;
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Mechanisms of CMP Pressure Profile Generation

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