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首页> 外文会议>Conseil International des Grands Reseaux Electriques;International Council on Large Electric Systems;CIGRE session >Development of High Efficiency D-STATCOM Using SiC Switching Devices
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Development of High Efficiency D-STATCOM Using SiC Switching Devices

机译：利用SiC开关器件开发高效D-STATCOM

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Applications of Voltage Source Converters (VSCs) in electric power systems will increase more and more with power electronics technology developments such as a circuit topology and a switching device. For the topology development, Modular Multilevel Converters (MMCs) have been introduced to high voltage and large capacity VSCs (greater than several tens MVA) applied to HVDC and FACTS systems. Both losses and harmonics are reduced compared with conventional 2 level or 3 level converters. For the power device development, Silicon Carbide (SiC) switching devices are expected to achieve remarkable loss reduction though they are not yet used commercially in the power systems.This paper presents investigation results regarding circuit topologies suitable for a 100 kVA class D-STATCOM, and verification test results of a prototype D-STATCOM rated at 33.5kVA using SiC switching devices. As a switching device, 1.2kV-30A Junction-Field Effect Transistor (J-FET) of normally off type is used, and for a free-wheeling diode, 1.2kV-7.5A SiC Schottky Barrier Diode (SBD) is applied. It is confirmed the efficiency of converter parts is 99.6% for the operation with equivalent switching frequency of 20 kHz.It is estimated 3.3 kV SiC switching devices will be available in the near future, and 100 kVA, 6.6 kV D-STATCOM can be manufactured with the same system configuration as the prototype D-STATCOM. It would be mounted on the distribution pole due to light weight, small volume and no audible noise along with smaller losses. Dispersed deployment of such D-STATCOMs enables the appropriate voltage control of the distribution system when the large penetration of distributed generations such as a photovoltaic generation or a wind power proceeds in the future power system.
机译：随着功率电子技术的发展，例如电路拓扑和开关器件，电压源转换器（VSC）在电力系统中的应用将越来越多。为了进行拓扑开发，已将模块化多电平转换器（MMC）引入了应用于HVDC和FACTS系统的高压和大容量VSC（大于几十MVA）。与传统的2级或3级转换器相比，损耗和谐波都减少了。对于功率器件的开发，尽管碳化硅（SiC）开关器件尚未在功率系统中商业使用，但有望实现显着的损耗降低。 本文介绍了有关适用于100 kVA级D-STATCOM的电路拓扑的调查结果，以及使用SiC开关器件对额定值为33.5kVA的D-STATCOM原型的验证测试结果。作为开关器件，使用常断型的1.2kV-30A结型场效应晶体管（J-FET），对于续流二极管，使用1.2kV-7.5A SiC肖特基势垒二极管（SBD）。可以确定，在20 kHz等效开关频率下，转换器部件的效率为99.6％。 估计不久的将来将提供3.3 kV SiC开关设备，并且可以使用与原型D-STATCOM相同的系统配置来制造100 kVA，6.6 kV D-STATCOM。由于重量轻，体积小，无可听见的噪声以及损耗较小，因此可以将其安装在配电杆上。当分布式发电（如光伏发电或风力发电）在未来的电力系统中大量普及时，此类D-STATCOM的分散部署可对配电系统进行适当的电压控制。

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