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首页> 外文会议>IEEE Photovoltaic Specialists Conference >Study of a low power plasma reactor for the synthesis of doped and undoped zinc oxide used as the window layer in CIGS solar cells
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Study of a low power plasma reactor for the synthesis of doped and undoped zinc oxide used as the window layer in CIGS solar cells

机译：用作CIGS太阳能电池窗层的掺杂掺杂掺杂氧化锌的低功率等离子体反应器

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The Low Power Plasma Reactor is an original process which allows a rapid deposition of ZnO thin films with calibrated thickness. The deposition is performed by the spraying of an aqueous precursor solution in cold plasma. The final optimizations allow high average growth rates reaching 0.6 nm/s. Characterization of films (XRD, FTIR, Transmittance, resistivity measures) reports the expected crystallinity, composition, the needed transparency and a calculated optical gap value ranging between 3.2-3.3 e V. The resistivity of layers was studied to be decreased in order to improve the electric properties of thin films. The performances of Cu(In,Ga)Se2 solar cells with a plasma sprayed intrinsic ZnO (i-ZnO) layer showed efficiencies around 15% (equivalent value with classic sputtered i-ZnO).
机译：低功率等离子体反应器是原始过程，其允许快速沉积具有校准厚度的ZnO薄膜。通过在冷等离子体中喷射含水前体溶液来进行沉积。最终优化允许高平均增长率达到0.6nm / s。薄膜的表征（XRD，FTIR，透射率，电阻率测量）报告了预期的结晶度，组合物，组成，所需的透明度和计算的光间隙值，范围在3.2-3.3 e V之间。研究了层的电阻率以降低以便改善薄膜的电性能。具有等离子体喷涂的内在ZnO（I-ZnO）层的Cu（In，Ga）Se2太阳能电池的性能显示出约15％的效率（具有经典溅射I-ZnO的当量值）。

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