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Technology Developments on iLGAD Sensors at IMB-CNM

机译：IMB-CNM的ILGAD传感器的技术发展

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In this contribution, we will present the status of the technological developments at IMB-CNM to fabricate Inverse Low Gain Avalanche Detectors (iLGAD) for pixelated detectors. This iLGAD sensor concept is one of the most promising technologies for enabling the future 4D tracking paradigm that requires both precise position and timing resolution. In the iLGAD concept, based on the LGAD technology, the readout is done at the ohmic contacts, allowing for a continuous unsegmented multiplication junction. This architecture provides a uniform gain over all the active sensor area. This concept was successfully demonstrated in a first generation of 300 μm thick iLGAD sensors. In the second generation, we have fabricated thick iLGAD sensor optimizing the periphery for X-Ray irradiations. Currently, we are developing a third generation based on 50 μm thick pixelated iLGADs optimized for timing detection, with a periphery design able to sustain high electric fields and a simpler single-side manufacturing process.
机译：在这一贡献中，我们将介绍IMB-CNM的技术发展的状态，以制造用于像素化探测器的逆低增益雪崩探测器（ILGAD）。此ILGAD传感器概念是最有希望的技术之一，用于启用未来的4D跟踪范式，需要精确的位置和时序分辨率。在ILGAD概念中，基于LGAD技术，读出在欧姆触点处完成，允许连续的未分段乘法结。该架构在所有有效传感器区域提供均匀增益。在第一代300μm厚的ILGAD传感器中成功地证明了这一概念。在第二代中，我们已经制造了厚厚的ILGAD传感器，优化了X射线照射的外围。目前，我们正在开发基于50微米厚的像素化ILGADS的第三代，优化用于定时检测，具有能够维持高电场和更简单的单面制造工艺的外围设计。

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